Abstract: A method and apparatus for providing workout guide information are provided. The apparatus includes a display, a memory configured to store workout route data including location data and elevation data, and a user profile, and a processor configured to determine at least one slope section through an analysis of the workout route data based on the user profile and output a map for displaying a workout route including the slope section to the display. The slope section in the workout route is configured to be displayed in a different form than a non-slope section. In addition, various embodiments identified throughout the specification are disclosed.

Abstract: A method and apparatus for providing workout guide information are provided. The apparatus includes a display, a memory configured to store workout route data including location data and elevation data, and a user profile, and a processor configured to determine at least one slope section through an analysis of the workout route data based on the user profile and output a map for displaying a workout route including the slope section to the display. The slope section in the workout route is configured to be displayed in a different form than a non-slope section. In addition, various embodiments identified throughout the specification are disclosed.

Abstract: Disclosed is electronic device including an input module that receives a user instruction to select a workout program and a weekly workout day or a workout date of the workout program and a control module that establishes a schedule of the workout program according to the total number of workout days and the weekly workout day or the workout date of the workout program.

Abstract: A method for fabricating a PCRAM includes forming a switching element on a semiconductor substrate, forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes, forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element, and forming a phase change material layer to fill a space inside of the heating electrode.

Abstract: A method for fabricating a PCRAM includes forming a switching element on a semiconductor substrate, forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes, forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element, and forming a phase change material layer to fill a space inside of the heating electrode.

Abstract: A method for manufacturing a phase change memory device, capable of improving reset current characteristics of a phase change layer by preventing thermal loss of the phase change layer. An interlayer dielectric layer having a lower electrode contact is formed on a semiconductor substrate. A phase change layer and an upper electrode layer are sequentially formed on the interlayer dielectric layer. Then, an upper electrode and a phase change pattern are formed by etching predetermined portions of the upper electrode layer and the phase change layer using an etching gas having chlorine gas.

Abstract: A method for fabricating a semiconductor device, the method includes forming a metal line over a substrate, the metal line having a stacked structure of a conductive layer and a barrier layer, forming an inter-metal dielectric layer over the barrier layer, etching the inter-metal dielectric layer by using a carbon-rich CF-based gas through a target opening the barrier layer, and forming a contact hole by overetching the barrier layer to a given depth by using a gas containing a smaller amount of carbon than in the etching of the inter-metal dielectric layer.