Abstract: A method for forming a shielding layer on a semiconductor device is disclosed. The semiconductor device comprises a bond pad formed on a front side of a substrate and extends to a first lateral surface of the substrate. The method comprises: etching a portion of the bond pad adjacent to the first lateral surface, to form a gap between the bond pad and the first lateral surface; attaching a filler onto the bond pad to fill the gap; and applying a shielding layer to a back side of the substrate.

Abstract: An electronic package is provided. The electronic package comprises a substrate having a first region and a second region; a first set of electronic components mounted on the substrate in the first region; a second set of electronic components mounted on the substrate in the second region; an encapsulant layer disposed on the substrate and encapsulating the first and second sets of electronic components; a set of interconnect components disposed on the substrate in the second region, and extending through the encapsulant layer, wherein the set of interconnect components are electrically coupled to the first and second sets of electronic components; and a connector mounted on the encapsulant layer and electrically coupled to the first and second sets of electronic components through the set of interconnect components.

Abstract: A semiconductor device has a substrate and electrical component disposed over the substrate. The electrical component can be a semiconductor die, semiconductor package, surface mount device, RF component, discrete electrical device, or IPD. A TIM is deposited over the electrical component. The TIM has a core, such as Cu, covered by graphene. A heat sink is disposed over the TIM, electrical component, and substrate. The TIM is printed on the electrical component. The graphene is interconnected within the TIM to form a thermal path from a first surface of the TIM to a second surface of the TIM opposite the first surface of the TIM. The TIM has thermoset material or soldering type matrix and the core covered by graphene is embedded within the thermoset material or soldering type matrix. A metal layer can be formed between the TIM and electrical component.

Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

Abstract: A transport device inspection system includes a plurality of transport devices configured to move along a transport path, a diagnostic server configured to create inspection schedule information for the plurality of transport devices, an inspector configured to receive the inspection schedule information from the diagnostic server and to sequentially inspect the plurality of transport devices in accordance with the inspection schedule information, and a transport device controller configured to receive the inspection schedule information from the inspector and to control the plurality of transport devices to sequentially move to an inspection position in accordance with the inspection schedule information.

Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

Abstract: A flexible TV is disclosed. The flexible TV includes a housing, a user interface configured to receive at least one command, a flexible display positioned in the housing, and a controller configured to control a door and a motor. In particular, the controller determines a range of the flexible display exposed to an outside of the housing by controlling at least one of the door or the motor according to a type of the command.

Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.

Abstract: A flexible TV is disclosed. The flexible TV includes a housing, a user interface configured to receive at least one command, a flexible display positioned in the housing, and a controller configured to control a door and a motor. In particular, the controller determines a range of the flexible display exposed to an outside of the housing by controlling at least one of the door or the motor according to a type of the command.

Abstract: Photovoltaic perovskite oxychalcogenide material and an optoelectronic device are provided. The optoelectronic device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer. In one embodiment, the active layer includes a perovskite oxychalcogenide compound and the perovskite oxychalcogenide compound is NaMO2Q, wherein M is Nb or Ta, and Q is S, Se or Te.