Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.

Abstract: Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.

Abstract: The present invention relates to slurry for polishing crystalline phase-change materials and to a method for producing a phase-change device using the same. The slurry for polishing crystalline phase-change materials according to one embodiment of the present invention comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water. In addition, the method for producing a phase-change device according to one embodiment of the present invention comprises the following steps: preparing a substrate; forming a crystalline phase-change material film on the substrate; and removing the phase-change material film through a chemical-mechanical polishing process using slurry for polishing phase-change materials, which comprises an abrasive, an alkaline abrasive enhancer, an oxidizing agent having a standard reduction potential higher than that of perchlorates, and ultrapure water.

Abstract: Disclosed is a slurry for polishing a phase change material. The slurry includes an abrasive, an alkaline polishing promoter and deionized water. Due to the use of the abrasive and the alkaline polishing promoter, the pH of the slurry is adjusted, the polishing rate of the phase change material is improved, and the polishing selectivity of the phase change material to an underlying insulating layer is increased. Further disclosed is a method for patterning a phase change material using the slurry.