Abstract: A semiconductor memory device includes a lower stacked structure with lower metal lines on a substrate, an upper stacked structure with an upper metal line on the lower stacked structure, a vertical structure penetrating the upper and lower stacked structures and including a channel layer, a first cutting line through the upper and lower stacked structures, an upper supporter in a recess on the first cutting line, a second cutting line through the upper and lower stacked structures and spaced apart from the first cutting line, a sub-cutting line through the upper stacked structure while at least partially overlapping the vertical structure in the vertical direction, the sub-cutting line being between the first and second cutting lines, top surfaces of the upper supporter and sub-cutting line being coplanar, and a first interlayer insulating layer surrounding a sidewall of each of the upper supporter and the sub-cutting line.

Abstract: Disclosed is an all-solid-state battery capable of suppressing volume expansion during charging and discharging.

Abstract: Disclosed is an anodeless all-solid-state battery which may effectively control local volume expansion due to lithium deposited during charging of the battery. The all-solid-state battery includes an anode current collector, an intermediate layer located on the anode current collector, a solid electrolyte layer located on the intermediate layer, a cathode active material layer located on the solid electrolyte layer and including a cathode active material, and a cathode current collector located on the cathode active material layer. The intermediate layer includes carbon particles and metal particles alloyable with lithium, and the carbon particles include a first carbon material, e.g., as a spherical carbon material, and a second carbon material, e.g., a linear carbon material.