Abstract: A semiconductor memory device includes a lower stacked structure with lower metal lines on a substrate, an upper stacked structure with an upper metal line on the lower stacked structure, a vertical structure penetrating the upper and lower stacked structures and including a channel layer, a first cutting line through the upper and lower stacked structures, an upper supporter in a recess on the first cutting line, a second cutting line through the upper and lower stacked structures and spaced apart from the first cutting line, a sub-cutting line through the upper stacked structure while at least partially overlapping the vertical structure in the vertical direction, the sub-cutting line being between the first and second cutting lines, top surfaces of the upper supporter and sub-cutting line being coplanar, and a first interlayer insulating layer surrounding a sidewall of each of the upper supporter and the sub-cutting line.

Abstract: A dashboard having a receiving structure for a portable terminal is provided, which comprises a space part which has an opening at its one side and where a portable terminal is mounted; and a support part which is provided in the interior of the space part and supports the terminal for preventing the movements of the terminal. And a dashboard having a receiving structure for a portable terminal is provided, which further comprises a cover which opens and closes the opening.

Abstract: A dashboard having a receiving structure for a portable terminal is disclosed, which comprises a space part which has an opening at its one side and where a portable terminal is mounted; and a support part which is provided in the interior of the space part and supports the terminal for preventing the movements of the terminal. And a dashboard having a receiving structure for a portable terminal is disclosed, which further comprises a cover which opens and closes the opening.