Abstract: Disclosed is a positive electrode material for a lithium secondary battery. The positive electrode material includes a positive electrode active material formed of Li—[Mn—Ti]-M-O-based material including a transition metal (M) to enable reversible intercalation and deintercalation of lithium and molybdenum oxide. The positive electrode active material is coated with the molybdenum oxide to form a coating layer on a surface thereof.

Abstract: A reverse-conducting insulated gate bipolar transistor and a method of manufacturing the same are disclosed. More particularly, the insulated gate bipolar transistor and the method of manufacturing the same are configured to form a cover layer so as to prevent external exposure of an uppermost surface of a first contact in a first cell region, thereby maximally reducing occurrences of contamination during subsequent processing.

Abstract: A method for fabricating a semiconductor device, such as a trench MOSFET device, is provided. The method includes: forming a hard mask on an upper surface of a semiconductor substrate; forming an opening in the hard mask to expose a portion of the semiconductor substrate; forming a trench in the semiconductor substrate by etching the semiconductor substrate using the hard mask as an etch mask; forming a gate insulating film on inner walls of the trench; forming a conductive film on the gate insulating film and at least a portion of the hard mask, the conductive film filling the trench; forming a patterned conductive film in the trench by etching the conductive film; removing the hard mask; and forming a gate electrode by polishing the patterned conductive film until an upper surface of the patterned conductive film aligns with the upper surface of the semiconductor substrate.

Abstract: A method for fabricating a semiconductor device, such as a trench MOSFET device, is provided. The method includes: forming a hard mask on an upper surface of a semiconductor substrate; forming an opening in the hard mask to expose a portion of the semiconductor substrate; forming a trench in the semiconductor substrate by etching the semiconductor substrate using the hard mask as an etch mask; forming a gate insulating film on inner walls of the trench; forming a conductive film on the gate insulating film and at least a portion of the hard mask, the conductive film filling the trench; forming a patterned conductive film in the trench by etching the conductive film; removing the hard mask; and forming a gate electrode by polishing the patterned conductive film until an upper surface of the patterned conductive film aligns with the upper surface of the semiconductor substrate.