Abstract: An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.

Abstract: A pixel driving circuit of an image sensor includes a first transistor to transmit an output signal of the photodiode to a floating diffusion node, a second transistor to reset a voltage of the floating diffusion node to a pixel voltage, a third transistor to output charges in the floating diffusion node, a fourth transistor to pre-charge an output node of the third transistor, a fifth transistor to transmit the charges in the floating diffusion node to a first node, a sixth transistor to transmit the pixel voltage to a second node, a seventh transistor to output charges in the second node, an eighth transistor to output an output signal of the seventh transistor to a column line, and a ninth transistor to output an output signal of the third transistor to the column line.

Abstract: A pixel driving circuit of an image sensor includes a first transistor to transmit an output signal of the photodiode to a floating diffusion node, a second transistor to reset a voltage of the floating diffusion node to a pixel voltage, a third transistor to output charges in the floating diffusion node, a fourth transistor to pre-charge an output node of the third transistor, a fifth transistor to transmit the charges in the floating diffusion node to a first node, a sixth transistor to transmit the pixel voltage to a second node, a seventh transistor to output charges in the second node, an eighth transistor to output an output signal of the seventh transistor to a column line, and a ninth transistor to output an output signal of the third transistor to the column line.

Abstract: An analog-to-digital converter includes an analog-to-digital conversion unit configured to output first and second digital signals based on a comparison of first and second reference voltages with an input signal, an amplifier including first and second input terminals and an output terminal, a first capacitor having one end or electrode connected to the first input terminal of the amplifier, a second capacitor having one end or electrode connected to the first input terminal of the amplifier, a third capacitor having one end or electrode connected to the first input terminal of the amplifier, a switch unit configured to selectively provide a third or fourth reference voltage to at least one of the second and third capacitors based on the first and second digital signals, and a control switch between another end or electrode of the first capacitor and the output terminal of the amplifier.

Abstract: An analog-to-digital converter includes an analog-to-digital conversion unit configured to output first and second digital signals based on a comparison of first and second reference voltages with an input signal, an amplifier including first and second input terminals and an output terminal, a first capacitor having one end or electrode connected to the first input terminal of the amplifier, a second capacitor having one end or electrode connected to the first input terminal of the amplifier, a third capacitor having one end or electrode connected to the first input terminal of the amplifier, a switch unit configured to selectively provide a third or fourth reference voltage to at least one of the second and third capacitors based on the first and second digital signals, and a control switch between another end or electrode of the first capacitor and the output terminal of the amplifier.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns, a selection unit configured to select outputs of some of the columns of the pixel array and output selection output signals, and an analog-digital conversion block including a plurality of analog-digital conversion units corresponding to the columns of the pixel array. First ones of the plurality of analog-digital conversion units include analog-digital conversion blocks configured to convert the selection output signals and output digital data. When the first analog-digital conversion units convert the selection output signals, second ones of the plurality of analog-digital conversion units are turned off.

Abstract: An image sensor may include a pixel array including an active pixel area including active pixels and a dark pixel area including dark pixels, an analog-to-digital conversion unit configured to generate a dark pixel data code by converting an analog output of each of the dark pixels and an active pixel data code by converting an analog output of each of the active pixels, an offset extractor configured to extract a final offset using the dark pixel data code, and a corrector configured to correct the active pixel data code using the final offset. The corrector outputs one of a correction pixel data code and a reference code as a corrected result from the active pixel data code and the reference code. The correction pixel data code is obtained by correcting the active pixel data code using the final offset.

Abstract: An image sensor may include a pixel array including an active pixel area including active pixels and a dark pixel area including dark pixels, an analog-to-digital conversion unit configured to generate a dark pixel data code by converting an analog output of each of the dark pixels and an active pixel data code by converting an analog output of each of the active pixels, an offset extractor configured to extract a final offset using the dark pixel data code, and a corrector configured to correct the active pixel data code using the final offset. The corrector outputs one of a correction pixel data code and a reference code as a corrected result from the active pixel data code and the reference code. The correction pixel data code is obtained by correcting the active pixel data code using the final offset.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns. The matrix being divided into a plurality of groups and each of the plurality of groups includes two or more different columns, a binning sampling unit configured to sample outputs of unit pixels in each of the plurality of groups and output binning sampling signals, and an analog-digital conversion block including first and second analog-digital conversion units corresponding to the columns. The first analog-digital conversion units convert the binning sampling signals. When the first analog-digital conversion units convert the binning sampling signals, the second analog-digital conversion units are turned off.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns, a selection unit configured to select outputs of some of the columns of the pixel array and output selection output signals, and an analog-digital conversion block including a plurality of analog-digital conversion units corresponding to the columns of the pixel array. First ones of the plurality of analog-digital conversion units include analog-digital conversion blocks configured to convert the selection output signals and output digital data. When the first analog-digital conversion units convert the selection output signals, second ones of the plurality of analog-digital conversion units are turned off.

Abstract: An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns. The matrix being divided into a plurality of groups and each of the plurality of groups includes two or more different columns, a binning sampling unit configured to sample outputs of unit pixels in each of the plurality of groups and output binning sampling signals, and an analog-digital conversion block including first and second analog-digital conversion units corresponding to the columns. The first analog-digital conversion units convert the binning sampling signals. When the first analog-digital conversion units convert the binning sampling signals, the second analog-digital conversion units are turned off.

Abstract: Disclosed is an image sensor that includes a pixel array including a plurality of unit pixels in a matrix having rows and columns, a binning sampling unit configured to (i) amplify with different gains signals from unit pixels selected from the unit pixels in each of the columns, and (ii) output a binning sampling signal according to an average of the amplified signals, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal.

Abstract: Disclosed is an image sensor. The disclosed image sensor includes a pixel array including a plurality of unit pixels arranged in a matrix form having rows and columns, a binning sampling unit configured to output a binning sampling signal according to an average of signals from two or more unit pixels selected from among the unit pixels of each of the columns, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal. The selected unit pixels have different exposure times.

Abstract: Disclosed is an image sensor that includes a pixel array including a plurality of unit pixels in a matrix having rows and columns, a binning sampling unit configured to (i) amplify with different gains signals from unit pixels selected from the unit pixels in each of the columns, and (ii) output a binning sampling signal according to an average of the amplified signals, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal.

Abstract: Disclosed is an image sensor. The disclosed image sensor includes a pixel array including a plurality of unit pixels arranged in a matrix form having rows and columns, a binning sampling unit configured to output a binning sampling signal according to an average of signals from two or more unit pixels selected from among the unit pixels of each of the columns, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal. The selected unit pixels have different exposure times.

Abstract: An image sensor is provided. An image sensor can include a plurality of unit pixels. Each of the unit pixels can include a photoelectric converter as a light receiving element. In each unit pixel, a transport switching unit can transport charges in the photoelectric converter to a floating diffusion region, and a first switching unit can selectively connect the floating diffusion region to a first sensing line. A second switching unit can selectively connect the floating diffusion region to a second sensing line, and a first sensing part can be connected to the first sensing line, and a second sensing part can be connected to the second sensing line.

Abstract: An image sensor is provided. An image sensor can include a plurality of unit pixels. Each of the unit pixels can include a photoelectric converter as a light receiving element. In each unit pixel, a transport switching unit can transport charges in the photoelectric converter to a floating diffusion region, and a first switching unit can selectively connect the floating diffusion region to a first sensing line.

Abstract: An image sensor is provided. The image sensor comprises a readout circuitry, a first image sensing device, an interconnection, and a second image sensing device. The readout circuitry is disposed in a first substrate. The first image sensing device is disposed at one side of the readout circuitry of the first substrate. The interconnection is disposed over the first substrate and electrically connected to the readout circuitry. The second image sensing device is disposed over the interconnection.

Abstract: Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a readout circuitry, an interconnection, an image sensing device, a first conductive-type ion implantation layer, and a via plug. The readout circuitry is formed in a first substrate. The interconnection is formed over the first substrate. The interconnection is electrically connected to the readout circuitry. Then image sensing device is formed over the interconnection. The image sensing device comprises a first conductive-type conductive layer and a second conductive-type conductive layer. The first conductive-type ion implantation layer is formed in a portion of the second conductive-type conductive layer of the image sensing device. The via plug penetrates through the first conductive-type ion implantation layer and the first conductive-type conductive layer to electrically connect the first conductive-type conductive layer to the interconnection.

Abstract: An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a first impurity region formed in the semiconductor substrate spaced from the photodiode, a second impurity region formed in the semiconductor substrate spaced from the first impurity region, a first gate formed over the semiconductor substrate between the photodiode and the first impurity region, a second gate formed over the semiconductor substrate between the first impurity region and the second impurity region, a spacer formed over the fourth impurity region and a first sidewall of the second gate, and an insulating film formed over the photodiode, the first gate, the first impurity region and a second sidewall and a portion of the uppermost surface of the second gate.