Patents by Inventor Hee-sung Yang

Hee-sung Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150072092
    Abstract: There are provided a microcapsular quantum dot-polymer composite, a method for producing the composite, optical elements, and a method for producing the optical elements. In order to produce the microcapsular quantum dot-polymer composite, a polymer having a functional group in the side chain is firstly heated in a first solvent to form a polymer solution. A quantum dot suspension consisting of quantum dots capped by a capping layer dispersed in a second solvent is added to the polymer solution to form a mixed solution. The mixed solution is cooled to form the quantum dot-polymer composite consisting of the quantum dots dispersed in the polymer matrix.
    Type: Application
    Filed: March 15, 2013
    Publication date: March 12, 2015
    Inventors: Young Soo Seo, Hee Sung Yang, Sang Yul Park, Hye Mi Son, Hyo Sun Kim
  • Publication number: 20140170032
    Abstract: The present invention relates to a metal filter for purifying the exhaust gas from a ship, and a preparation method thereof. The purpose of the present invention is to provide: a metal filter for purifying the exhaust gas from a ship, capable of reducing nitrogen oxide by 85% or more at 250-300° C.; and a preparation method thereof. The metal filter for removing nitrogen oxide contained in the exhaust gas from a ship of the present invention comprises an integrated catalyst, wherein a metal substrate comprising irregularities is coated with a low temperature active catalyst in which vanadium (V), tungsten (W) and alumina sol are supported in a Ti-pillared clay (Ti-PILC) powdered support.
    Type: Application
    Filed: March 22, 2013
    Publication date: June 19, 2014
    Applicants: HYUNDAI HEAVY INDUSTRIES CO., LTD., E&d CO., LTD., HYUNDAI BANGSTEEL CO., LTD.
    Inventors: Hee-Sung Yang, Joon-Ho Ko, Chan-do Park, Seok-Lyong Song, Jae-Woo Lee, Sung-Young Lee, Jai-Hyun Park, Kyoung-Jae Kim, Seung-Han Han, Young-Jin Cho, Tae-Min Kim, Ju-Yong Jung
  • Patent number: 6475944
    Abstract: A catalyst for effectively removing NOx by using NH3 as a reducing agent is disclosed. Particularly, a vanadia impregnated onto Ti-PILC (titania-pillared interlayer clay) is disclosed, which is prepared by the generally known technology. More specifically, a V2O5/Ti-PILC catalyst is disclosed, in which NOx contained in the flue gas from an electric power plant and the like (an excessive amount of SO2 being present in the flue gas stream) is reacted with NH3 (which is injected as a reducing agent) over a vanadia impregnated onto a Ti-PILC, so that they can be converted into harmless nitrogen and water. The V2O5/Ti-PILC catalyst is employed for reducing NOx contained in the exhaust gas stream as well as the large amounts of SO2 into nitrogen and water. The catalyst is prepared by pillaring a titania to a clay by a pillaring method.
    Type: Grant
    Filed: March 27, 2000
    Date of Patent: November 5, 2002
    Assignee: Hyundai Heavy Industries Co., Ltd.
    Inventors: Hee-Sung Yang, Seok-Lyong Song, Hyun-Chul Choi, In-Sik Nam, Ho-Jeong Chae
  • Patent number: 6451684
    Abstract: A semiconductor device having a conductive layer side surface slope of at least 90° and a method for making the same is provided. An interlayer dielectric film and a conductive layer are formed on a semiconductor substrate. The interlayer dielectric film has a side surface slope defining a hole of less than 90°. A conductive layer having a side surface slope of at least 90° is formed in the hole defined by the interlayer dielectric film. The semiconductor device is manufactured by coating a preliminary film on a semiconductor substrate. Patterning the preliminary film forms a preliminary film pattern having a side surface slope of 90°. The interlayer dielectric film is formed on the semiconductor substrate and the preliminary film pattern. Removing some of the interlayer dielectric film exposes an upper surface of the preliminary film pattern.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: September 17, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myeong-cheol Kim, Hee-sung Yang