Abstract: A multilayer encapsulation thin-film and a method and apparatus for preparing a multilayer encapsulation thin-film are provided. The multilayer encapsulation thin-film includes an inorganic thin film that includes a metal oxide, and an organic thin film that includes a polymer and is formed on the inorganic thin film, where the inorganic thin film and the organic thin film are alternately stacked in multiple layers.

Abstract: The present invention provides a composition containing an inorganic nano-particle structure absorbing blue light and then emitting light and a siloxane compound; a light-conversion thin-film made of the composition; and a display panel using the film. When using the composition, the light-conversion thin-film as an optical member may have high stability. Further, when using the film, a display panel with excellent stability even under high-temperature and high-water conditions may be realized.

Abstract: An inorganic nanoparticles-based structure in accordance with the present disclosure includes inorganic nano-particles; and a novel ligand coordinated to a surface of each of the inorganic nano-particles, wherein the ligand has a urethane bond resulting from reaction with an isocyanate compound having a double bond, and, thus, has a double bond at terminals thereof. Further, the present disclosure provides an optical member, a light-emitting device, and a quantum dot display device including the inorganic nanoparticles-based structure.

Abstract: A light-emitting structure in accordance with the present disclosure includes inorganic nano-particles; ligands coordinated to surfaces of the inorganic nano-particles, wherein each of the ligands contains an acrylic polymer. Further, the present disclosure provides an optical member, a light-emitting device, and a liquid crystal device including the light-emitting structure.

Abstract: Provided are compositions comprising quantum dots bearing organic ligands, the quantum dots being disposed onto polymeric particles, and the polymeric particles in turn being dispersed into a medium. The compositions are characterized by enhanced dispersion of the quantum dots and improve the performance of display devices that include the compositions.

Abstract: A multilayer encapsulation thin-film and a method and apparatus for preparing a multilayer encapsulation thin-film are provided.

Abstract: The present invention provides a composition containing an inorganic nano-particle structure absorbing blue light and then emitting light and a siloxane compound; a light-conversion thin-film made of the composition; and a display panel using the film. When using the composition, the light-conversion thin-film as an optical member may have high stability. Further, when using the film, a display panel with excellent stability even under high-temperature and high-water conditions may be realized.

Abstract: An inorganic nanoparticles-based structure in accordance with the present disclosure includes inorganic nano-particles; and a novel ligand coordinated to a surface of each of the inorganic nano-particles, wherein the ligand has a urethane bond resulting from reaction with an isocyanate compound having a double bond, and, thus, has a double bond at terminals thereof. Further, the present disclosure provides an optical member, a light-emitting device, and a quantum dot display device including the inorganic nanoparticles-based structure.

Abstract: A light-emitting structure in accordance with the present disclosure includes inorganic nano-particles; ligands coordinated to surfaces of the inorganic nano-particles, wherein each of the ligands contains an acrylic polymer. Further, the present disclosure provides an optical member, a light-emitting device, and a liquid crystal device including the light-emitting structure.

Abstract: The present invention relates to a delayed fluorescence-quantum dot (QD) electroluminescent diode, the delayed fluorescence-quantum dot electroluminescent diode includes an anode, a cathode, and a light emitting layer located between the anode and the cathode, and the light emitting layer includes a QD and a delayed fluorescence material which supplies energy to the QD.

Abstract: The present invention relates to a delayed fluorescence-quantum dot (QD) electroluminescent diode, the delayed fluorescence-quantum dot electroluminescent diode includes an anode, a cathode, and a light emitting layer located between the anode and the cathode, and the light emitting layer includes a QD and a delayed fluorescence material which supplies energy to the QD.

Abstract: This invention relates to a polymer/inorganic multi-layer encapsulation film, and more particularly, to a multi-layer encapsulation film, which includes a plasma polymer thin film layer formed using a cross-shaped precursor having Si—O bonding and an inorganic thin film layer, and ensures flexibility and has improved encapsulation.

Abstract: A multilayer encapsulation thin-film and a method and apparatus for preparing a multilayer encapsulation thin-film are provided. The multilayer encapsulation thin-film includes an inorganic thin film that includes a metal oxide, and an organic thin film that includes a polymer and is formed on the inorganic thin film, where the inorganic thin film and the organic thin film are alternately stacked in multiple layers.

Abstract: This invention relates to a polymer/inorganic multi-layer encapsulation film, and more particularly, to a multi-layer encapsulation film, which includes a plasma polymer thin film layer formed using a cross-shaped precursor having Si—O bonding and an inorganic thin film layer, and ensures flexibility and has improved encapsulation.

Abstract: Apparatus for controlling the flow of a gas between a process region and an exhaust port in a semiconductor substrate processing chamber is provided. The apparatus includes at least one restrictor plate supported within the semiconductor processing chamber and at least partially circumscribing a substrate support pedestal. The restrictor plate is adapted to control the flow of at least one gas flowing between the process region and the exhaust port.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.

Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry.