Abstract: A method for fabricating a semiconductor device, which improves the threshold voltage by forming an air tunnel in the lower part of the transistor channel of a semiconductor device, and also improves the short channel effect by making better the sub-threshold voltage properties and increasing the internal pressure between the drain and the source, as well as improving the ESD (electrostatic discharge) property.

Abstract: A method for fabricating a semiconductor device, which improves the threshold voltage by forming an air tunnel in the lower part of the transistor channel of a semiconductor device, and also improves the short channel effect by making better the sub-threshold voltage properties and increasing the internal pressure between the drain and the source, as well as improving the ESD (electrostatic discharge) property.

Abstract: There is provided a method for forming fine metal patterns of semiconductor devices using damascene technique. In the method, a glue layer and a diffusion barrier film are formed on a lower layer, in turn. An insulating film is then deposited on the barrier film and etched to form contact holes or via holes. A metal film is then deposited within the hole to form a fine metal pattern. Therefore, the method can increase the width of the metal film of the fine pattern, thereby enhancing the operation speed of the device. The method can also easily control the processes by separating the etching process of the metal film from those of the glue layer and the barrier film.