Abstract: A memory device includes a memory block, a peripheral circuit, and a control logic. The memory block includes a plurality of string groups respectively connected to a corresponding select line, among a plurality of select lines. The peripheral circuit performs a program operation of data on the memory block. The control logic controls the program operation of the peripheral circuit. The memory block is connected to first to n-th word lines. The control logic is configured to control the peripheral circuit to perform a first program operation on a physical page, among physical pages that are included in a first string group, connected to an i-th word line, performs a second program operation on a physical page that is connected to an (i?1)-th word line, and perform a dummy program operation on a physical page that is connected to an (i+1)-th word line. Here, n is a natural number equal to or greater than 3, and i is a natural number greater than 0 and less than n?1.

Abstract: Proposed is a detachable lighting device including lighting units. The positions of the lighting units are changeable along a mounting rail within an interior space. The number of the lighting units and the mounting positions of the lighting units are adjustable. Accordingly, occupants within the interior space adjust light distribution as desired by each occupant.

Abstract: A memory device, and a method of operating the memory device, includes a memory block including memory cells. The memory device also includes a voltage generator configured to apply a read voltage and pass voltages to word lines coupled to the memory block. The voltage generator is configured to apply the read voltage to a selected word line among the word lines and apply different pass voltages to unselected word lines symmetrical to each other with respect to the selected word line depending on distances to the selected word line, during a read operation on the memory block.

Abstract: A read operation on selected memory cells may be performed by a method of operating a semiconductor memory device. The method may include determining a read voltage to be used in the read operation among first to 2N?1-th read voltages, applying the determined read voltage to a selected word line connected to the selected memory cells, and applying a read pass voltage to unselected word lines based on whether the determined read voltage is a first read voltage. Here, N may be a natural number of 2 or more.

Abstract: A semiconductor memory device and a method of operating the same are provided herein. The semiconductor memory device includes first and second pages, a peripheral circuit, and a control logic. The first page includes first memory cells, each storing N bits. The second page includes second memory cells, each storing N?1 bit. The peripheral circuit performs a first program operation that results in a threshold voltage of each first memory cell to be included in one of 2N states and performs a second program operation that results in a threshold voltage of each second memory cell to be included in one of 2N?1 states. The control logic controls the first and second program operations through the peripheral circuit and controls the peripheral circuit to perform the second program operation by using at least one, but not all of a plurality of verify voltages that are used in the first program operation.

Abstract: There are provided a memory device and an operating method of the memory device. The memory device includes: a first select transistor, a plurality of memory cells, and a second select transistor, connected between a source line and a bit line; and a peripheral circuit for performing a pre-program operation on the plurality of memory cells and then performing an erase operation on the plurality of memory cells. In the pre-program operation, the peripheral circuit is configured to apply a program voltage to word lines that are connected to the plurality of memory cells corresponding to a channel that has been floated.

Abstract: Provided herein is a semiconductor memory device and a method of operating the semiconductor memory device. The semiconductor memory device includes a memory block including memory cell strings, a voltage supply circuit configured to apply operating voltages to global drain select lines, global source select lines, and global word lines, and apply an erase voltage to bit lines or to the bit lines and a source line during an erase operation, a pass circuit configured to couple the global drain select lines, global source select lines, and global word lines to local drain select lines, local source select lines, and local word lines in response to a block select signal, and control logic configured to control the voltage supply circuit to apply a first operating voltage to the global drain select lines and thereafter apply a second operating voltage to the global drain select lines.

Abstract: Provided herein is a memory device, a memory system including the memory device, and a method of operating the memory system. The memory device including a memory cell array including a plurality of memory blocks, each of the plurality of memory blocks including a plurality of sub-blocks, peripheral circuits configured to perform a program operation on a memory block selected from among the plurality of memory blocks and configured to, when a program failure occurs during the program operation, move and store first data stored in a failed sub-block in which the program failure has occurred, among the plurality of sub-blocks, to a replacement block, among the plurality of memory blocks, and control logic configured to control the peripheral circuits to perform the program operation and generate bad block information from information about the failed sub-block.

Abstract: A memory device, and a method of operating the memory device, includes a memory block including strings formed between bit lines and a source line and includes a peripheral circuit configured to perform a read operation of a selected memory cell included in a selected string among the strings. The peripheral circuit includes page buffers configured to increase a voltage of channels of the strings by applying a first precharge voltage to the bit lines in a set-up phase of the read operation, apply a second precharge voltage lower than the first precharge voltage to the bit lines in a read phase of the read operation, and discharge the bit lines in a discharge phase of the read operation.

Abstract: A semiconductor memory device includes a first cell string, a second cell string, a peripheral circuit, and a control logic. The first cell string includes first and second drain select transistors. The second cell string includes third and fourth drain select transistors. The peripheral circuit performs a program operation on the fourth drain select transistor included in the second cell string. The threshold voltage of the first drain select transistor is set through an ion implantation process. The threshold voltage of the fourth drain select transistor is set through the program operation.

Abstract: There are provided a memory device and an operating method thereof. The memory device includes: a memory block including a plurality of memory cells; and a peripheral circuit for performing a program operation and an erase operation on the memory block. The program operation is performed by using a hole injection method, and the erase operation is performed by using an electron charging method. The plurality of memory cells are programmed when a threshold voltage of each of at least some of the plurality of memory cells is decreased to be less than a set level in the program operation, and are erased when the threshold voltage of each of the plurality of memory cells is increased to be the set level or higher in the erase operation.

Abstract: A semiconductor memory device includes a cell string and a peripheral circuit. The cell string includes at least one drain select transistor that is connected to a bit line, at least one source select transistor that is connected to a common source line, and a plurality of memory cells that are connected between the drain select transistor and the source select transistor. The peripheral circuit performs a read operation on a selected memory cell among the plurality of memory cells. The peripheral circuit is configured to read data that is stored in the selected memory cell by applying a read voltage to a selected word line among word lines that are connected to the plurality of memory cells and by applying a pass voltage to unselected word lines, and configured to transmit a boosting prevention voltage to a channel region in the cell string while applying an equalizing voltage to the word lines.

Abstract: A memory device includes word lines vertically stacked from a substrate, memory cells electrically connected to the word lines, a group controller configured to group the word lines into word line groups, and change the word line groups, based on electrical characteristics of the memory cells, and a voltage generator configured to store, in a voltage table, voltage values of operating voltages to be respectively applied to the word line groups.

Abstract: A semiconductor memory device includes a memory block, a peripheral circuit, and control logic. The memory block includes a plurality of string groups respectively connected to a corresponding source select line among a plurality of source select lines. The peripheral circuit is configured to perform a program operation of storing data within the memory block. The control logic controls the program operation of the peripheral circuit. The plurality of source select lines are grouped into a plurality of source select line groups. The control logic controls the peripheral circuit to increase a voltage of a first source select line group including a source select line connected to a selected string group to a first level among the plurality of source select line groups.

Abstract: A method of operating a semiconductor memory device programming selected memory cells to store bits of data in each of the selected memory cells includes foggy programming and fine programming.

Abstract: A semiconductor memory device includes a memory block including plurality of string groups, a peripheral circuit, and control logic. The peripheral circuit performs a program operation on source select transistors included in the memory block. The control logic controls the program operation of the peripheral circuit. Each of the plurality of string groups includes at least one cell string, and the at least one cell string includes inner source select transistors located adjacent to memory cells and outer source select transistors located adjacent to a common source line. The control logic controls the peripheral circuit to perform program operations on the outer source select transistors and the inner source select transistors by an ISPP method. The control logic controls the peripheral circuit to perform a verify operation by dividing the inner source select transistors into at least two groups during the program operation of the inner source select transistors.

Abstract: A memory device includes a memory block, a peripheral circuit, and a control logic. The memory block includes a plurality of string groups respectively connected to a corresponding select line, among a plurality of select lines. The peripheral circuit performs a program operation of data on the memory block. The control logic controls the program operation of the peripheral circuit. The memory block is connected to first to n-th word lines. The control logic is configured to control the peripheral circuit to perform a first program operation on a physical page, among physical pages that are included in a first string group, connected to an i-th word line, performs a second program operation on a physical page that is connected to an (i?1)-th word line, and perform a dummy program operation on a physical page that is connected to an (i+1)-th word line. Here, n is a natural number equal to or greater than 3, and i is a natural number greater than 0 and less than n?1.

Abstract: There are provided a memory device and an operating method thereof. The memory device includes: sub-blocks divided with respect to a buffer page in which buffer cells are included; a voltage generator for, in a program operation of a selected sub-block among the sub-blocks, applying a first pass voltage to unselected word lines connected to the selected sub-block, and applying a second pass voltage lower than the first pass voltage to unselected word lines connected to an unselected sub-block; and a buffer line circuit for selectively turning on or turning off the buffer cells by selectively applying a turn-on voltage or a turn-off voltage to buffer lines connected to the buffer cells. A position of the buffer page is set as a default according to a physical structure of memory cells included in the sub-blocks, and is reset according to an electrical characteristic of the memory cells.

Abstract: A semiconductor memory device includes a precharge block, a select block, a peripheral circuit, and control logic. The precharge block is connected to bit lines and includes memory cells in an erase state. The select block shares the bit lines with the precharge block and includes memory cells in a program state. The peripheral circuit performs erase operation on the select block. The control logic controls the peripheral circuit to turn on a first circuit connected to the precharge block and apply first voltage to global lines connected to the first circuit when erase voltage is applied to a source line commonly connected to the precharge block and the select block. The memory cells of the precharge block are turned on by the first voltage applied from the global lines, and the erase voltage applied to the source line is transferred to the bit lines through the precharge block.

Abstract: A semiconductor memory device includes a memory cell array, a page buffer, and control logic. The memory cell array includes a plurality of memory cells for storing data. The page buffer is coupled to at least one memory cell among the plurality of memory cells through a bit line and is configured to store data in the at least one memory cell. The control logic is configured to control an operation of the page buffer. The page buffer includes a first transistor coupled between the bit line and a first node, a second transistor coupled between the bit line and an external power voltage terminal, and an internal operation circuit coupled to the first node.