Patents by Inventor Heejae CHUNG

Heejae CHUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230094022
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).
    Type: Application
    Filed: November 22, 2022
    Publication date: March 30, 2023
    Inventors: Tae Hyung KIM, Yuho WON, Eun Joo JANG, Heejae CHUNG, Oul CHO
  • Publication number: 20230071604
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Application
    Filed: November 11, 2022
    Publication date: March 9, 2023
    Inventors: Sung Woo KIM, Jin A KIM, Tae Hyung KIM, Kun Su PARK, Yuho WON, Jeong Hee LEE, Eun Joo JANG, Eun Joo JANG, Hyo Sook JANG, Yong Seok HAN, Heejae CHUNG
  • Publication number: 20220416187
    Abstract: An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (?max) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm.
    Type: Application
    Filed: June 28, 2022
    Publication date: December 29, 2022
    Inventors: Tae Hyung KIM, Heejae CHUNG, Eun Joo JANG, Sujin PARK, Yuho WON
  • Patent number: 11512254
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: November 29, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Hyung Kim, Yuho Won, Eun Joo Jang, Heejae Chung, Oul Cho
  • Patent number: 11499098
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 15, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang, Yong Seok Han, Heejae Chung
  • Publication number: 20210102119
    Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).
    Type: Application
    Filed: September 29, 2020
    Publication date: April 8, 2021
    Inventors: Tae Hyung KIM, Yuho WON, Eun Joo JANG, Heejae CHUNG, Oul CHO
  • Publication number: 20210062087
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Application
    Filed: August 31, 2020
    Publication date: March 4, 2021
    Inventors: Sung Woo KIM, Jin A KIM, Tae Hyung KIM, Kun Su PARK, Yuho WON, Jeong Hee LEE, Eun Joo JANG, Hyo Sook JANG, Yong Seok HAN, Heejae CHUNG
  • Patent number: 9902900
    Abstract: Provided is a nanoparticle polymer in which a plurality of core particles that are linked to each other by a linker are surrounded by a metal-chalcogenide compound shell. The nanoparticle polymer may include a nanoparticle polymer including a core assembly including at least two nanoparticles connected to each other by a linker; and a shell that surrounds a surface of the core assembly and includes a metal-chalcogenide compound.
    Type: Grant
    Filed: November 11, 2014
    Date of Patent: February 27, 2018
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Kyungsang Cho, Dongho Kim, Heejae Chung
  • Publication number: 20150262727
    Abstract: Provided is a nanoparticle polymer in which a plurality of core particles that are linked to each other by a linker are surrounded by a metal-chalcogenide compound shell. The nanoparticle polymer may include a nanoparticle polymer including a core assembly including at least two nanoparticles connected to each other by a linker; and a shell that surrounds a surface of the core assembly and includes a metal-chalcogenide compound.
    Type: Application
    Filed: November 11, 2014
    Publication date: September 17, 2015
    Applicants: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Kyungsang CHO, Dongho KIM, Heejae CHUNG