Patents by Inventor Heejae Shim

Heejae Shim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8729576
    Abstract: A light emitting device is provided that includes a substrate, a buffer layer disposed on an r-plane of the substrate, the buffer layer having a rock salt structured nitride, and a light emitting structure arranged on the buffer layer, the light emitting structure being grown in an a-plane.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: May 20, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Heejae Shim
  • Publication number: 20120138957
    Abstract: Embodiments disclose a light emitting device including a substrate, a buffer layer disposed on an R-plane of the substrate, the buffer layer having a rock salt structured nitride, and a light emitting structure arranged on the buffer layer, the light emitting structure being grown in an a-plane.
    Type: Application
    Filed: January 31, 2012
    Publication date: June 7, 2012
    Inventor: Heejae SHIM
  • Patent number: 7741634
    Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.
    Type: Grant
    Filed: March 26, 2008
    Date of Patent: June 22, 2010
    Assignee: Massachusetts Institute of Technology
    Inventors: Heejae Shim, Jagadeesh S. Moodera
  • Publication number: 20090247410
    Abstract: A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K.
    Type: Application
    Filed: March 26, 2008
    Publication date: October 1, 2009
    Inventors: Heejae Shim, Jagadeesh S. Moodera