Abstract: Embodiments provide an ink composition, a layer manufactured using the ink composition, an electrophoresis device including the layer, and a display device including the layer. The ink composition includes a semiconductor nanorod, and a solvent that satisfies Equation 1: |?1??2|/?1*100?10??[Equation 1] In Equation 1, ?1 is a dielectric constant of the solvent at 50 Hz, and ?2 is a dielectric constant of the solvent at 50 kHz.

Abstract: Disclosed are an ink composition, a layer manufactured using the ink composition, an electrophoresis device including the layer, and a display device, the ink composition including (A) a semiconductor nanorod including: a functional group represented by Chemical Formula 1; and (B) a solvent. In Chemical Formula 1, each substituent is as defined in the specification.

Abstract: Disclosed are an ink composition, a layer manufactured using the ink composition, an electrophoresis apparatus including the layer, and a display device, the ink composition including (A) a semiconductor nanorod, and (B) a solvent including a compound having a set or specific structure, wherein the solvent has an electrical conductivity of less than 2.0 ?S/m at 25° C.

Abstract: Embodiments provide an ink composition, a layer manufactured using the ink composition, and an electrophoresis apparatus and a display device including the same. The ink composition includes a semiconductor nanorod including at least one functional group each independently represented by one of Chemical Formula 1-1 to Chemical Formula 1-3, and a solvent.

Abstract: Provided are quantum dots passivated by oligomers or polymers which are formed by a reaction of a first monomer having at least three thiol groups (—SH) at the terminal end with a second monomer having at least two functional groups at the terminal end that can react with the thiol groups, and a spacer group between the at least two functional groups.

Abstract: Provided are quantum dots passivated by oligomers or polymers which are formed by a reaction of a first monomer having at least three thiol groups (—SH) at the terminal end with a second monomer having at least two functional groups at the terminal end that can react with the thiol groups, and a spacer group between the at least two functional groups.

Abstract: Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed.

Abstract: Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed.

Abstract: Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed.