Abstract: A method of producing sulfur-containing amino acids or derivatives of the sulfur-containing amino acids.

Abstract: The disclosure provides a plasma dry etching method. A plasma dry etching method according to an embodiment of the disclosure may include: a first step of placing a substrate having a photoresist pattern formed thereon, which is composed of an exposed portion and a non-exposed portion, on an electrode inside a reaction chamber of a plasma dry etching device; a second step of modifying the surface of the photoresist pattern through a plasma deposition process using a first gas; and a third step of selectively etching the non-exposed portion of the surface-modified photoresist pattern through a plasma dry etching process using a second gas.

Abstract: Embodiments of the present disclosure relate to a storage device based on a daisy chain topology. According to embodiments of the present disclosure, a storage device may include a plurality of memory package chips each including a plurality of memory dies capable of storing data; and a controller communicating with the plurality of memory package chips and connected to the plurality of memory package chips through one or more daisy chain circuits.

Abstract: A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.

Abstract: Embodiments of the present disclosure relate to a storage device based on a daisy chain topology. According to embodiments of the present disclosure, a storage device may include a plurality of memory package chips each including a plurality of memory dies capable of storing data; and a controller communicating with the plurality of memory package chips and connected to the plurality of memory package chips through one or more daisy chain circuits.

Abstract: One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.

Abstract: One embodiment of the present invention provides a method of manufacturing an electronic device using a cyclic doping process including i) an operation of forming a unit transfer thin film including a two-dimensional material on a transfer substrate, ii) an operation of doping the unit transfer thin film in a low-damage doping process, iii) an operation of transferring the unit transfer thin film doped according to the operation ii) on a transfer target substrate, and iv) an operation of repeatedly performing the operations i) to iii) several times to reach a target thickness.

Abstract: The present invention introduces a plasma etching method and apparatus. The plasma etching method may include forming a photoresist pattern on a target etching layer, hardening the surface of the photoresist pattern by exposing to a first plasma generated from a first discharge gas containing a reforming gas including carbon (C) and sulfur (S) and sequentially annealing, and etching the target etching layer with a second plasma generated from a second discharge gas using the surface-hardened photoresist pattern as a mask.

Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium producing L-amino acid, a method for producing L-amino acid using the same, use of L-amino acid production, and a composition for producing L-amino acid.

Abstract: An L-methionine-producing microorganism into which a metZ gene is introduced and a method of producing L-methionine using the same.

Abstract: Embodiments of the present disclosure relate to a storage device based on a daisy chain topology. According to embodiments of the present disclosure, a storage device may include a plurality of memory package chips each including a plurality of memory dies capable of storing data; and a controller communicating with the plurality of memory package chips and connected to the plurality of memory package chips through one or more daisy chain circuits.

Abstract: A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.

Abstract: A method of producing sulfur-containing amino acids or derivatives of the sulfur-containing amino acids.

Abstract: A method of producing sulfur-containing amino acids or derivatives of the sulfur-containing amino acids.

Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium producing a purine nucleotide and a method for producing a purine nucleotide using the same.

Abstract: The present disclosure relates to a microorganism of the genus Corynebacterium producing a purine nucleotide and a method for producing a purine nucleotide using the same.

Abstract: A printed circuit board including: a circuit layer including a plurality of circuit layers; a first structure including a plurality of first unit vias, each first unit via being vertically disposed and formed between successive circuit layers that are vertically adjacent to each other; and a second structure including a plurality of second unit vias, each second unit via being vertically disposed and horizontally spaced apart from a respective first unit via, wherein a horizontal spaced distance between each respective first unit via and the second unit via is a set value or less.

Abstract: Provided is a method of manufacturing a plastic substrate with lower auto-fluorescence and better specificity. The method includes: (a) preparing a plastic substrate having an Atomic Force Microscopic (AFM) surface roughness of Ra<3 nm or Rq<4 nm under the condition of 50 ?m×50 ?m or less; (b) treating the plastic substrate with plasma; and (c) treating the plastic substrate with a surface-modifying monomer. A plastic substrate manufactured by the method is also provided. The plastic substrate exhibits a remarkably low auto-fluorescence and thus better specificity for detection of target biomolecules, which enables the broad application of a plastic substrate, which can be easily designed to include a microfluidic structure relative to a glass substrate but has been limitedly used due to high auto-fluorescence, to microarrays, biochips, or well plates.