Abstract: A display substrate and a manufacturing method thereof, and a display device, are disclosed. The display substrate includes a base substrate and a thin film transistor (TFT) array, including a plurality of TFTs. A first electrode in each TFT includes a first portion and a second portion, a height of the second portion being greater than a height of the first portion in a direction perpendicular to the base substrate, wherein the first portion forms a groove with respect to the second portion and a wall of the groove comprises the second portion of the first electrode of a thin film transistor adjacent to the TFT. A bottom of the groove is the first pixel electrode of a light emitting element, wherein an organic light emitting functional layer is deposited in the groove on the first pixel electrode, and the second pixel electrode on the organic light emitting functional layer.

Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.

Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.

Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.

Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.

Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.

Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.