Patents by Inventor Hefei LI

Hefei LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190207037
    Abstract: The present disclosure provides a thin film transistor, a manufacturing method thereof, an array substrate and a display panel. The thin film transistor includes a light shielding layer disposed on a base substrate, and an active layer disposed on the light shielding layer. The light shielding layer is provided with a groove on a side facing the active layer, and an orthographic projection of the active layer on the base substrate is located within an orthographic projection of a bottom surface of the groove on the base substrate.
    Type: Application
    Filed: May 11, 2018
    Publication date: July 4, 2019
    Applicants: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Chengcheng WANG, Hefei LI, Kui GONG, Biliang DONG
  • Patent number: 10241371
    Abstract: A thin film transistor, a method for manufacturing the same, an array substrate and a display device are provided. The method for manufacturing a thin film transistor includes: providing a substrate; forming an active layer and a light shielding layer covering the active layer on the substrate by a patterning process, the light shielding layer being formed of a photoresist material; and forming a source-drain electrode layer and a passivation layer covering the source-drain electrode layer.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: March 26, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hefei Li, Xianxue Duan, Chengcheng Wang
  • Publication number: 20190019814
    Abstract: A display substrate, a method for fabricating the same, and a display panel are disclosed. The method comprises forming a TFT on a substrate. The TFT comprises a gate, a gate insulating layer, an active layer, an ohmic contact layer, a source and a drain which are formed on the substrate in sequence. After forming the active layer, and prior to forming the ohmic contact layer, the method comprises forming a first pattern in a non-TFT region. The first pattern in the non-TFT region covers the gate insulating layer.
    Type: Application
    Filed: June 16, 2017
    Publication date: January 17, 2019
    Inventors: Xianxue DUAN, Kui GONG, Hefei LI, Jilong LI, Hui AN, Biliang DONG, Chengcheng WANG
  • Publication number: 20180308931
    Abstract: The present disclosure provides in some embodiments a thin film transistor, a display substrate, a display device and manufacturing methods thereof. The method for manufacturing the thin film transistor includes: forming an active layer having a first groove structure and a second groove structure, the first groove structure and the second groove structure being separated from each other; and depositing a conductive layer into the first groove structure and the second groove structure to form a first electrode and a second electrode of the thin film transistor.
    Type: Application
    Filed: November 22, 2017
    Publication date: October 25, 2018
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hefei LI, Xianxue DUAN, Chengcheng WANG, Tianzhen LIU
  • Publication number: 20180299736
    Abstract: A thin film transistor, a method for manufacturing the same, an array substrate and a display device are provided. The method for manufacturing a thin film transistor includes: providing a substrate; forming an active layer and a light shielding layer covering the active layer on the substrate by a patterning process, the light shielding layer being formed of a photoresist material; and forming a source-drain electrode layer and a passivation layer covering the source-drain electrode layer.
    Type: Application
    Filed: November 14, 2017
    Publication date: October 18, 2018
    Inventors: Hefei LI, Xianxue DUAN, Chengcheng WANG