Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, a second nitride-based transistor, and a thermal resistor. The first nitride-based transistor is disposed over the second nitride-based semiconductor layer and applies the 2DEG region as an own channel. The second nitride-based transistor is disposed over the second nitride-based semiconductor layer and applying the 2DEG region as an own channel. The temperature sensor is disposed over the second nitride-based semiconductor layer and between first and second nitride-based transistors. The temperature sensor is in a strip shape and at least turns twice in a region between first and second nitride-based transistors.

Abstract: This disclosure provides a valve stem of a needle throttle valve and the method of fabricating the same. The valve stem includes ahead part, a body part, a washer, a first solder sheet and a second solder sheet. The washer is made of metal. The first solder sheet is placed between the head part and the washer, and the second solder sheet is placed between the body part and the washer. The head part, the washer and the body part are jointed together by the melted first solder sheet and the melted second solder sheet.

Abstract: This disclosure provides a valve stem of a needle throttle valve and the method of fabricating the same. The valve stem includes ahead part, a body part, a washer, a first solder sheet and a second solder sheet. The washer is made of metal. The first solder sheet is placed between the head part and the washer, and the second solder sheet is placed between the body part and the washer. The head part, the washer and the body part are jointed together by the melted first solder sheet and the melted second solder sheet.