Abstract: By integrating a spacer removal process into the sequence for patterning a first stress-inducing material during a dual stress liner approach, the sidewall spacer structure for one type of transistor may be maintained, without requiring additional lithography steps.

Abstract: During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.

Abstract: During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.

Abstract: A stress compensation region that may be appropriately positioned on a package substrate may compensate for or at least significantly reduce the thermally induced mechanical stress in a sensitive metallization system of a semiconductor die, in particular during the critical reflow process. For example, a stressor ring may be formed so as to laterally surround the chip receiving portion of the package substrate, wherein the stressor ring may efficiently compensate for the thermally induced deformation in the chip receiving portion.

Abstract: During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.

Abstract: Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes.

Abstract: By providing an implantation blocking material on the gate electrode structures of advanced semiconductor devices during high energy implantation processes, the required shielding effect with respect to the channel regions of the transistors may be accomplished. In a later manufacturing stage, the implantation blocking portion may be removed to reduce the gate electrode height to a desired level in order to enhance the process conditions during the deposition of an interlayer dielectric material, thereby significantly reducing the risk of creating irregularities, such as voids, in the interlayer dielectric material, even in densely packed device regions.

Abstract: Enhanced efficiency of a stress relaxation implantation process may be achieved by depositing a first layer of reduced thickness and relaxing the same at certain device regions, thereby obtaining an enhanced amount of substantially relaxed dielectric material in close proximity to the transistor under consideration, wherein a desired high amount of stressed dielectric material may be obtained above other transistors by performing a further deposition process. Hence, the negative effect of the highly stressed dielectric material for specific transistors, for instance in densely packed device regions, may be significantly reduced by depositing the highly stressed dielectric material in two steps with an intermediate relaxation implantation process.

Abstract: A stress compensation region that may be appropriately positioned on a package substrate may compensate for or at least significantly reduce the thermally induced mechanical stress in a sensitive metallization system of a semiconductor die, in particular during the critical reflow process. For example, a stressor ring may be formed so as to laterally surround the chip receiving portion of the package substrate, wherein the stressor ring may efficiently compensate for the thermally induced deformation in the chip receiving portion.

Abstract: Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes.

Abstract: By providing an implantation blocking material on the gate electrode structures of advanced semiconductor devices during high energy implantation processes, the required shielding effect with respect to the channel regions of the transistors may be accomplished. In a later manufacturing stage, the implantation blocking portion may be removed to reduce the gate electrode height to a desired level in order to enhance the process conditions during the deposition of an interlayer dielectric material, thereby significantly reducing the risk of creating irregularities, such as voids, in the interlayer dielectric material, even in densely packed device regions.

Abstract: During a replacement gate approach, the inverse tapering of the opening obtained after removal of the polysilicon material may be reduced by depositing a spacer layer and forming corresponding spacer elements on inner sidewalls of the opening. Consequently, the metal-containing gate electrode material and the high-k dielectric material may be deposited with enhanced reliability.

Abstract: Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes.

Abstract: By integrating a spacer removal process into the sequence for patterning a first stress-inducing material during a dual stress liner approach, the sidewall spacer structure for one type of transistor may be maintained, without requiring additional lithography steps.

Abstract: Enhanced efficiency of a stress relaxation implantation process may be achieved by depositing a first layer of reduced thickness and relaxing the same at certain device regions, thereby obtaining an enhanced amount of substantially relaxed dielectric material in close proximity to the transistor under consideration, wherein a desired high amount of stressed dielectric material may be obtained above other transistors by performing a further deposition process. Hence, the negative effect of the highly stressed dielectric material for specific transistors, for instance in densely packed device regions, may be significantly reduced by depositing the highly stressed dielectric material in two steps with an intermediate relaxation implantation process.

Abstract: By providing an implantation blocking material on the gate electrode structures of advanced semiconductor devices during high energy implantation processes, the required shielding effect with respect to the channel regions of the transistors may be accomplished. In a later manufacturing stage, the implantation blocking portion may be removed to reduce the gate electrode height to a desired level in order to enhance the process conditions during the deposition of an interlayer dielectric material, thereby significantly reducing the risk of creating irregularities, such as voids, in the interlayer dielectric material, even in densely packed device regions.