Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.

Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.

Abstract: An Apparatus and method are provided for sensing temperature of a sample. Apparatus 2 has a sensor 5, positionable relative to a sample 3, which is responsive to temperature of a region of the sample at each position of the sensor. Sensor circuitry 10 provides a response signal indicative of the sensor response at the position of the sensor. Sample-temperature controller 12 controls temperature of sample 3 independently of sensor 5. Sample-temperature controller 12 effects a time-dependent modulation of the sample temperature such that a time-dependent heat flux is generated between the sample and the sensor at the position of the sensor. Temperature analyzer 11 extracts time-averaged and time-dependent components of the response signal due to the modulation of the sample temperature, and processes the components to produce an output indicative of temperature of the sample at the position of the sensor.

Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.

Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.

Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: Temperature sensing. An Apparatus and method are provided for sensing temperature of a sample. Apparatus 2 has a sensor 5, positionable relative to a sample 3, which is responsive to temperature of a region of the sample at each position of the sensor. Sensor circuitry 10 provides a response signal indicative of the sensor response at the position of the sensor. Sample-temperature controller 12 controls temperature of sample 3 independently of sensor 5. Sample-temperature controller 12 effects a time-dependent modulation of the sample temperature such that a time-dependent heat flux is generated between the sample and the sensor at the position of the sensor. Temperature analyzer 11 extracts time-averaged and time-dependent components of the response signal due to the modulation of the sample temperature, and processes the components to produce an output indicative of temperature of the sample at the position of the sensor.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.

Abstract: An electroluminescent device is provided that in sequence comprises an anode, a hole injecting layer, an emission layer comprising an emitting material, an electron injecting layer, and a cathode. The emission layer further comprises a stabilizing material whose energy bandgap is larger than the energy bandgap of the emitting material.

Abstract: A field effect device includes a source electrode, a drain electrode, a channel formed between the source electrode and the drain electrode, and a gate electrode formed directly on the channel and arranged in a gap between the source electrode and the drain electrode. The channel includes a switching material that is reversibly switchable between a lower conductivity state and a higher conductivity state. The first conductivity state has an electrical conductivity which is lower than an electrical conductivity of the second conductivity state. Each of the conductivity states is persistent without the need for a sustaining excitation signal including an electrical field, heat and/or light applied to the device.

Abstract: An electrode comprises an inorganic composite layer of a mixture of at least one insulating inorganic material and at least one at least partially conducting inorganic material. In an application of such an electrode, an organic electroluminescent device comprises a first and second conductor layers. An organic layer is disposed between the first and second conductor layers. The aforementioned composite layer is disposed between the organic layer and the first conductor layer. Methods of fabricating such an electrode and such a device are also described.

Abstract: A method for manufacturing an organic electronic device including a stack of layers with a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.

Abstract: Provides optoelectronic devices and methods for manufacturing an optoelectronic devices. Optoelectronic devices including a capping layer for improving out-coupling and optical fine-tuning of emission characteristics. The present invention is particularly advantageous for top-emitting devices and for organic light emitting devices. An example optoelectronic device includes an optoelectronic member for emitting light, a light emitting surface and a capping layer on the light emitting surface. The capping layer includes a mixture of a first material having a first refractive index and a second material having a second refractive index.

Abstract: A field effect device (2) comprises a source electrode (14), a drain electrode (16), a channel (24) formed between the source electrode (14) and the drain electrode (16), and a gate electrode (22) separated from the channel (24) by an insulating layer (20), wherein the channel (24) comprises a switching material reversibly switchable between a lower conductivity state and a higher conductivity state, each of the conductivity states being persistent.

Abstract: The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the invention a process for fabricating semiconductors, organic light-emitting devices (OLEDs), field-effect transistors, and in particular high-resolution patterning for RGB displays. A process for fabricating an organic electronic device includes the steps of heating and applying a pressure to the deposition material to form a melt, and depositing the melted deposition material on the surface with a phase-change printing technique or a spray technique. The melted deposition material solidifies on the surface.

Abstract: There is provided a method for fabricating an organic light emitting device. The method includes depositing a first electrode layer on a substrate, depositing an electrically insulating layer on the first electrode layer, depositing a second electrode layer on the insulating layer, depositing an organic layer on the second electrode layer, forming an aperture in the organic layer, depositing a light transmissive electrically conductive layer on the organic layer, and forming an electrical connection between the conductive layer and one of the first and second electrode layers via the aperture.

Abstract: An organic light emitting device has a layer structure comprising: a first electrode layer (20); a second electrode layer (40) parallel to the first electrode layer (20); and, an electrically conductive and light transmissive layer (70) parallel to the second electrode layer. An electrically insulating layer (30) is disposed between the first and second electrode layers. A layer of organic material (50) is disposed between the second electrode layer and the conductive layer. An aperture (60) in the organic layer provides an electrical connection path between the conductive layer and one of the first and second electrode layers.

Abstract: A method of making a light-emitting device comprises forming a first and second components. The first component has a first substrate, a first electrode on the first substrate, an organic layer on the first electrode, and a light-transmissive second electrode on the organic layer. The second component has a light-transmissive second substrate, and a light transmissive, electrically conductive layer on the second substrate. The first and second components are joined with the second electrode of the first component facing the conductive layer of the second component. An electrical contact is formed between the second electrode of the first component and the electrically conductive layer of the second component.