Abstract: A method for determining a resource use of resources provided by one or more devices (50) in order to carry out a service, the method comprising at a miner (100): determining (S41) a latest block (35b) of a blockchain (35) related to the service and a total resource information present in the latest block, wherein the total resource information represents the total amount of resources used by the one or more devices (50) for providing the service since a defined starting point in time, determining (S42) that a new use case of resources of a first device of the one or more devices (50) has occurred which is not reflected by the total resource information and determining a new amount of the resources used by the first device during the new use case, determining (S43) a new total resource information in which the total resource information is combined with the new amount of the resources and which reflects a complete use of the resources of the one or more devices from the defined starting point until determi

Abstract: A method for controlling a parking of a plurality of autonomous vehicles parking in a row is provided. The method includes determining a minimum row length of the row needed to park the plurality of vehicles in the row taking into account a minimum physical space including an individual vehicle length, determining at least one additional space requirement of at least one of the plurality of vehicles which is temporarily needed by said at least one vehicle for a predefined event, determining a total row length of the row, determining a free space in the row, distributing the free space to the row, determining parking information for each of the plurality of vehicles based on the distributed free space, and distributing the parking information to at least some of the plurality of vehicles.

Abstract: A method for controlling a parking of a plurality of autonomous vehicles parking in a row is provided. The method includes determining a minimum row length of the row needed to park the plurality of vehicles in the row taking into account a minimum physical space including an individual vehicle length, determining at least one additional space requirement of at least one of the plurality of vehicles which is temporarily needed by said at least one vehicle for a predefined event, determining a total row length of the row determining a free space in the row, distributing the free space to the row, determining parking information for each of the plurality of vehicles based on the distributed free space, and distributing the parking information to at least some of the plurality of vehicles.

Abstract: Methods and devices are provided for granting temporary remote access via biometric data. A method may include establishing, by a content computing device, a communication session between the content computing device and a remote computing device. The method may further include receiving, by the content computing device from a biometric sensor, a signal confirming biometric authentication thereby establishing an authentication session between the content computing device and the biometric sensor. The method may further include granting, by the content computing device, the temporary remote access for the remote computing device to the data stored in a data storage of the content computing device during said communication session and while the authentication session remains valid. The content computing device is configured to be proximate to the biometric sensor.

Abstract: A method for determining a resource use of resources provided by one or more devices (50) in order to carry out a service, the method comprising at a miner (100): determining (S41) a latest block (35b) of a blockchain (35) related to the service and a total resource information present in the latest block, wherein the total resource information represents the total amount of resources used by the one or more devices (50) for providing the service since a defined starting point in time, determining (S42) that a new use case of resources of a first device of the one or more devices (50) has occurred which is not reflected by the total resource information and determining a new amount of the resources used by the first device during the new use case, determining (S43) a new total resource information in which the total resource information is combined with the new amount of the resources and which reflects a complete use of the resources of the one or more devices from the defined starting point until determi

Abstract: The invention relates to a method in a network comprising a plurality of nodes for monitoring an object, wherein a first node (100) performs or triggers the steps of providing (202), in the network, a first rank value for monitoring the object by the node, determining a comparison result by comparing the first rank value with at least a second rank value provided by another node or receiving a result of the comparison, and transferring or assuming a monitoring responsibility based on the comparison result; the invention further related to a corresponding computer program, a corresponding computer program product and a corresponding node.

Abstract: The present disclosure provides a method of forming a semiconductor device, including a shaping of a gate structure of the semiconductor device such that a spacer removal after silicide formation is avoided and silicide overhang is suppressed. In some aspects of the present disclosure, a method of forming a semiconductor device is provided wherein a gate structure is provided over an active region of a semiconductor substrate, the gate structure including a gate electrode material and sidewall spacers. At least one of the gate electrode material and the sidewall spacers are shaped by applying a shaping process to the gate structure and a silicide portion is formed on the shaped gate structure.

Abstract: The present disclosure provides a method of forming a semiconductor device, including a shaping of a gate structure of the semiconductor device such that a spacer removal after silicide formation is avoided and silicide overhang is suppressed. In some aspects of the present disclosure, a method of forming a semiconductor device is provided wherein a gate structure is provided over an active region of a semiconductor substrate, the gate structure including a gate electrode material and sidewall spacers. At least one of the gate electrode material and the sidewall spacers are shaped by applying a shaping process to the gate structure and a silicide portion is formed on the shaped gate structure.

Abstract: A method of reducing the impact of FEoL topography on dual stress liner depositions and the resulting device are disclosed. Embodiments include forming a first nitride layer between and over a pFET and an nFET; thinning the first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.

Abstract: A method of reducing the impact of FEoL topography on dual stress liner depositions and the resulting device are disclosed. Embodiments include forming a first nitride layer between and over a pFET and an nFET; thinning the first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.

Abstract: Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the etch mask is removed from over a recess mid-point. A center contact is formed in the interlayer dielectric at the recess mid-point.

Abstract: Integrated circuits with close electrical contacts and methods for fabricating such integrated circuits are provided. The method includes forming a first and a second contact in an interlayer dielectric, and forming a recess between the first and second contact. A etch mask is formed overlying the interlayer dielectric, and the etch mask is removed from over a recess mid-point. A center contact is formed in the interlayer dielectric at the recess mid-point.