Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched openings at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

Abstract: This publication discloses a method for creating a sensor construction. According to the method, on top of a conducting substrate (2), an insulating layer (5) is formed and connected to the micromechanical construction. According to the invention, the insulating layer (5) is formed to be thicker (14) in the support area (16) than in the other areas, or thinner (13) in the area of the electrode (8) than in the support area (16) of the sensor.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: In a novel multilayer transducer (1') with bonded contacts and a method for fabricating the bonded contact areas (5') of the transducer, the contact areas (5') are formed on the side surface (7) of the transducer by metal deposition using laser-based deposition, sputter deposition or another suitable metallization method. By virtue of the fabrication method of the contact areas, the size of the transducer (1')can be reduced and the transducer (1') can be bonded to a circuit board using surface-mount technology.

Abstract: This invention concerns a capacitive pressure sensor construction and method for fabricating said sensor. The pressure sensor construction comprises a base part (1, 2, 4), comprising an electrically conductive silicon layer (1, 2) and a thereupon permanently bonded planar intermediate layer (4) of an insulating material with an essentially smaller thickness than that of the silicon layer (1, 2); a fixed planar capacitor electrode (9) fabricated on the base part (1, 2, 4); and a deflecting membranous capacitor electrode (6) fabricated of silicon and integral with a surrounding, essentially thicker base element (5), and gappedly spaced from and aligned at least approximately coincident with the fixed capacitor electrode (9), so that a hermetically sealed chamber (25) remains between the fixed electrode (9) and the membranous electrode (6).

Abstract: A capacitive pressure transducer includes a capacitive sensor structure, a case into which the capacitive sensor structure is adapted, channels formed in the case for introducing a measured medium into the capacitive sensor structure, and electrical conductors to make the pressure-related capacitive sensor information externally available. According to the invention, the capacitive sensor structure is fixed to the case by means of elastic structures, which elastic structures provide a floating support for the capacitive sensor structure adapted between the elastic structures. The construction in accordance with the invention cancels errors caused by temperature variations.

Abstract: This publication discloses a capacitor construction for use in pressure transducers, including a substrate plate having of a silicon wafer and a thinner glass wafer. A first fixed capacitor plate is provided for overlying the substrate plate plate. A silicon plate is adapted to encircle the substrate plate with its thinned center area acting as a moving capacitor plate by virtue of its diaphragm behavior and a top plate overlying the silicon plate includes a silicon wafer and a glass wafer bonded to the silicon wafer and having a thickness essentially smaller than that of the silicon wafer. According to the invention, over the supporting substrate plate and between the first capacitor plate and its encircling silicon plate, is provided another overlying capacitor overlying plate, which essentially encloses the first capacitor plate. With this design, a reduced temperature sensitivity is accomplished in the capacitor construction.

Abstract: Described herein is a capacitive absolute pressure transducer including a flat base plate (9) of insulating material, e.g., of glass, with a fixed capacitor electrode (10), aligned on the base plate. A silicon-material moving diaphragm electrode (5) of the capacitor is at least partly aligned with the fixed electrode (10), properly spaced to implement a hermetically sealed vacuum chamber (7) between the fixed electrode (10) and moving diaphragm electrode (5). Electrical contacts (12) are attached to the fixed electrode (10) and the moving diaphragm electrode (5). According to the invention, the flat base plate (9) is bonded to an electrically conductive wafer (8) to implement a laminated substrate (2), the diaphragm electrode (5) fabricated integral with a surrounding and essentially thicker collar part (18), and the electrical contact to the fixed capacitor plate (10) in the area of the vacuum chamber (7) is a well (11, 12) extending through the base plate (9) to the wafer (8).

Abstract: A piezoelectric sensor consists of material for transmitting elastic waves and has a surface subjected to the condensation and presence of dew and liquid to be detected. A wave producing device includes a transmitter for producing an acoustic surface wave on the surface in conjunction with piezoelectric phenomena of the sensor. A detector includes a receiver for receiving the wave after transmission thereof across the surface. The wave is variably attenuated in transmission between the transmitter and receiver in accordance with dew or liquid on the surface. A measuring device measures the attenuation of the detected wave and thereby indicates the dew point or presence of liquid on the surface.