Patents by Inventor Heiko Aßmann

Heiko Aßmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Identification codes on semiconductor chips
    Patent number: 12379666
    Abstract: A method of generating chip-specific identification code marks on semiconductor chips includes patterning a resist layer over a semiconductor wafer by laser direct image exposure, the patterning including writing chip-specific identification codes into the resist layer over chip areas of the semiconductor wafer. The patterned resist layer is then developed.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: August 5, 2025
    Assignee: Infineon Technologies AG
    Inventors: Detlef Hofmann, Heiko Aßmann
  • IDENTIFICATION CODES ON SEMICONDUCTOR CHIPS
    Publication number: 20230350309
    Abstract: A method of generating chip-specific identification code marks on semiconductor chips includes patterning a resist layer over a semiconductor wafer by laser direct image exposure, the patterning including writing chip-specific identification codes into the resist layer over chip areas of the semiconductor wafer. The patterned resist layer is then developed.
    Type: Application
    Filed: April 20, 2023
    Publication date: November 2, 2023
    Inventors: Detlef Hofmann, Heiko Aßmann
  • Method for producing a self-aligning masking layer
    Patent number: 10468248
    Abstract: In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: November 5, 2019
    Assignee: Infineon Technologies AG
    Inventors: Heiko Aßmann, Felix Braun, Marcus Dankelmann, Stefan Doering, Karsten Friedrich, Udo Goetschkes, Andreas Greiner, Ralf Rudolf, Jens Schneider