Abstract: A pressing ram having an elastic cushion element and intended for the material-bonded press-sintering connection of a first connection partner to a second connection partner of a power-electronics component. The elastic cushion element of the pressing ram is enclosed by a dimensionally stable frame, within which the cushion element and a guide part of the pressing ram are guided for linear movement such that the dimensionally stable frame lowers onto the first connection partner, or a workpiece carrier with the first connection partner arranged therein, and, following abutment against the same, the pressing ram together with the elastic cushion element is lowered onto the second connection partner and the elastic cushion exerts a pressure necessary for connecting the first connection partner to the second connection partner.

Abstract: A power semiconductor substrate comprising an insulating planar base, at least one conductor track and at least one contact area as part of the conductor track, wherein a layer of a metallic material is disposed on the contact area by means of pressure sintering. The associated method comprises the steps of: producing a power semiconductor substrate that includes a planar insulating base, conductor tracks and contact areas; arranging a pasty layer, composed of a metallic material and a solvent, on at least one contact area of the power semiconductor substrate; and applying pressure to the pasty layer.

Abstract: A pressing ram having an elastic cushion element and intended for the material-bonded press-sintering connection of a first connection partner to a second connection partner of a power-electronics component. The elastic cushion element of the pressing ram is enclosed by a dimensionally stable frame, within which the cushion element and a guide part of the pressing ram are guided for linear movement such that the dimensionally stable frame lowers onto the first connection partner, or a workpiece carrier with the first connection partner arranged therein, and, following abutment against the same, the pressing ram together with the elastic cushion element is lowered onto the second connection partner and the elastic cushion exerts a pressure necessary for connecting the first connection partner to the second connection partner.

Abstract: A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. The underfill has a matrix formed from a preceramic polymer.

Abstract: A power semiconductor module comprising a substrate, a circuit formed thereon and having a plurality of conductor tracks that are electrically insulated from one another and power semiconductor components arranged on the conductor tracks. The latter are connected in a circuit-conforming manner by a connection device, which has an alternating layer sequence of at least two electrically conductive layers with at least one electrically insulating layer between them. In this case, the substrate has a first sealing area, which uninterruptedly encloses the circuit. Furthermore, this sealing area is connected to an assigned second sealing area on a layer of the connection device by a connection layer. According to the invention, this power semiconductor module is produced by applying pressure to the substrate, to the power semiconductor components and to the connection device.

Abstract: A semiconductor arrangement, in particular a power semiconductor arrangement, in which a semiconductor having a top side provided with contacts is connected to an electrical connection device formed from a film assembly wherein an underfill is provided between the connection device and the top side of the semiconductor. The underfill has a matrix formed from a preceramic polymer.

Abstract: A power semiconductor module comprising a substrate, a circuit formed thereon and having a plurality of conductor tracks that are electrically insulated from one another and power semiconductor components arranged on the conductor tracks. The latter are connected in a circuit-conforming manner by a connection device, which has an alternating layer sequence of at least two electrically conductive layers with at least one electrically insulating layer between them. In this case, the substrate has a first sealing area, which uninterruptedly encloses the circuit. Furthermore, this sealing area is connected to an assigned second sealing area on a layer of the connection device by a connection layer. According to the invention, this power semiconductor module is produced by applying pressure to the substrate, to the power semiconductor components and to the connection device.

Abstract: A power semiconductor substrate comprising an insulating planar base, at least one conductor track and at least one contact area as part of the conductor track, wherein a layer of a metallic material is disposed on the contact area by means of pressure sintering. The associated method comprises the steps of: producing a power semiconductor substrate that includes a planar insulating base, conductor tracks and contact areas; arranging a pasty layer, composed of a metallic material and a solvent, on at least one contact area of the power semiconductor substrate; and applying pressure to the pasty layer.

Abstract: A power semiconductor substrate with an insulating sheet-like base, having at least one sequence of layers of: a thin adhesion promoting layer, a sintered metal layer and a conductive layer arranged on at least one main area of the substrate. The associated process includes the steps of: coating at least a portion of the one main area with the adhesion promoting layer; arranging a pasty layer of the sintered metal and a solvent on at least a portion of the adhesion promoting layer; arranging the conductive layer on the sintered metal layer; and applying pressure to the conductive layer of the power substrate.