Patents by Inventor Heiko Frenzel

Heiko Frenzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transparent rectifying metal/metal oxide/semiconductor contact structure and method for the production thereof and use
    Patent number: 8445904
    Abstract: The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and/or metal nitride, the resistivity of which is preferably in the range of 102 ?cm to 107 ?cm and c) a layer composed of a transparent electrical conductor wherein the layer b) is formed between the semiconductor a) and the layer c) and the composition of the layer b) is defined in greater detail in the description of the patent.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: May 21, 2013
    Assignee: Universität Leipzig
    Inventors: Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern
  • Transparent Rectifying Metal/Metal Oxide/Semiconductor Contact Structure and Method for the Production Thereof and Use
    Publication number: 20120091453
    Abstract: The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and/or metal nitride, the resistivity of which is preferably in the range of 102 ?cm to 107 ?cm and c) a layer composed of a transparent electrical conductor wherein the layer b) is formed between the semiconductor a) and the layer c) and the composition of the layer b) is defined in greater detail in the description of the patent.
    Type: Application
    Filed: June 21, 2010
    Publication date: April 19, 2012
    Applicant: UNIVERSITAET LEIPZIG
    Inventors: Marius Grundmann, Heiko Frenzel, Alexander Lajn, Holger von Wenckstern