Abstract: An arrangement for transferring information/structures to wafers uses a stamp on which the information/structures to be transferred have been applied as elevated structures. The wafer is fixed on a chuck and is provided with a plastically deformable auxiliary patterning layer. In various implementations, the dimensions of the stamp approximately correspond to those of the wafer, the stamp is provided with the elevated structures essentially over the whole area, and/or the stamp and the wafer are in each case provided with mutually assigned pairs of alignment marks in such a way that the stamp can be positioned in a predetermined position on the wafer by means of an infrared positioning system and can be pressed into the plastically deformable auxiliary patterning layer.

Abstract: A wafer exposure device includes a wafer stage. An optical exposure system exposes a wafer on the wafer stage. A sensor block measures a distance to a wafer provided on the wafer stage. The sensor block includes a plurality of height level sensors. Each height level sensor measures and outputs height level values. The wafer exposure device compares with one another the measured height level values outputted by respective height level sensors. The wafer exposure device calculates individual sensor position offset values to be attributed to the individual height level sensors. The wafer exposure device corrects the measured height level values output by the respective height level sensors using the calculated sensor position offset values of the respective height level sensor.

Abstract: The mutually associated structure patterns, which are provided on one mask, or a plurality of masks for a double or multiple exposure can be received by the mask substrate holder. The mask substrate holder has two receiving stations one for each of the masks. Alternatively, both structure patterns for the double exposure are formed on one mask. The substrate holder has one receiving station. The substrate holder, is displaced from the section including first structure pattern to the second, between the two exposure operations, without the masks having to be loaded or unloaded, and realigned.

Abstract: An alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool includes a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, and a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer. The first partial structure has a plurality of first structure elements, which are arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints symmetrically around the center of an inner region. The second partial structure has a plurality of second structure elements, formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region.

Abstract: A measurement mark (3) for determining the relative positional accuracy of a progressive projection onto a wafer (5), the projection being performed with two masks (3, 4), comprising two structure elements (10, 20) formed on a respective one of the masks (1, 2). The structure elements (10, 20) overlap with regard to their position on the masks so that, during the projection of the second structure element (20), an electrically conductive structure (30) formed on the basis of the first structure element on the wafer (5) is overformed by removal of a portion (31). In an electrical line width measurement, the reduced width (CD, CD30a) of the structure (30) is measured and compared either with the original width (62) or with that width (CD30b) of a further partial element (30b) produced by the overforming.

Abstract: A batch of semiconductor wafers are exposed after an alignment in a wafer stepper or scanner and each of their alignment parameters are determined. Using, e.g., a linear formula with tool specific coefficients, the overlay accuracy can be calculated from these alignment parameters in advance with a high degree of accuracy as if a measurement with an overlay inspection tool had been performed. The exposure tool-offset can be adjusted on a wafer-to-wafer basis to correct for the derived overlay inaccuracy. Moreover, the alignment parameters for a specific wafer can be used to change the tool-offset for the same wafer prior to exposure. The required inspection tool capacity is advantageously reduced, the wafer rework decreases, and time is saved to perform the exposure step.

Abstract: A measurement mark (3) for determining the relative positional accuracy of a progressive projection onto a wafer (5), the projection being performed with two masks (3, 4), comprising two structure elements (10, 20) formed on a respective one of the masks (1, 2). The structure elements (10, 20) overlap with regard to their position on the masks so that, during the projection of the second structure element (20), an electrically conductive structure (30) formed on the basis of the first structure element on the wafer (5) is overformed by removal of a portion (31). In an electrical line width measurement, the reduced width (CD, CD30a) of the structure (30) is measured and compared either with the original width (62) or with that width (CD30b) of a further partial element (30b) produced by the overforming.

Abstract: A method for exposing a semiconductor wafer in an exposer includes applying a first resist layer on a layer covering an alignment mark. A microscope measuring instrument, which has a visible and an ultraviolet light source, uses the visible light source for aligning the wafer and uses the ultraviolet light source for exposing a region in the first resist layer above the alignment mark without using a mask to free expose the alignment marks. The semiconductor wafer is then developed, the alignment mark is etched free and covered again with a second resist, which is exposed in an exposer in order to transfer a mask structure following an alignment with the alignment mark. The capacity of expensive exposers is thus advantageously increased, and microscope measuring instruments can be used multifunctionally, for example for the free exposure and for the detection of defects.

Abstract: The mutually associated structure patterns, which are provided on one mask, or a plurality of masks for a double or multiple exposure can be received by the mask substrate holder. The mask substrate holder has two receiving stations one for each of the masks. Alternatively, both structure patterns for the double exposure are formed on one mask. The substrate holder has one receiving station. The substrate holder, is displaced from the section including first structure pattern to the second, between the two exposure operations, without the masks having to be loaded or unloaded, and realigned.

Abstract: An alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool includes a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, and a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer. The first partial structure has a plurality of first structure elements, which are arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints symmetrically around the center of an inner region. The second partial structure has a plurality of second structure elements, formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region.

Abstract: An arrangement for transferring information/structures to wafers uses a stamp on which the information/structures to be transferred have been applied as elevated structures. The wafer is fixed on a chuck and is provided with a plastically deformable auxiliary patterning layer. In various implementations, the dimensions of the stamp approximately correspond to those of the wafer, the stamp is provided with the elevated structures essentially over the whole area, and/or the stamp and the wafer are in each case provided with mutually assigned pairs of alignment marks in such a way that the stamp can be positioned in a predetermined position on the wafer by means of an infrared positioning system and can be pressed into the plastically deformable auxiliary patterning layer.

Abstract: A batch of semiconductor wafers are exposed after an alignment in a wafer stepper or scanner and each of their alignment parameters are determined. Using, e.g., a linear formula with tool specific coefficients, the overlay accuracy can be calculated from these alignment parameters in advance with a high degree of accuracy as if a measurement with an overlay inspection tool had been performed. The exposure tool-offset can be adjusted on a wafer-to-wafer basis to correct for the derived overlay inaccuracy. Moreover, the alignment parameters for a specific wafer can be used to change the tool-offset for the same wafer prior to exposure. The required inspection tool capacity is advantageously reduced, the wafer rework decreases, and time is saved to perform the exposure step.

Abstract: A method for exposing a semiconductor wafer in an exposer includes applying a first resist layer on a layer covering an alignment mark. A microscope measuring instrument, which has a visible and an ultraviolet light source, uses the visible light source for aligning the wafer and uses the ultraviolet light source for exposing a region in the first resist layer above the alignment mark without using a mask to free expose the alignment marks. The semiconductor wafer is then developed, the alignment mark is etched free and covered again with a second resist, which is exposed in an exposer in order to transfer a mask structure following an alignment with the alignment mark. The capacity of expensive exposers is thus advantageously increased, and microscope measuring instruments can be used multifunctionally, for example for the free exposure and for the detection of defects.

Abstract: While a first leading semiconductor wafer (11) already processed in a process appliance (1) and belonging to a batch is being measured in a microscope measuring instrument (2) in relation to values for the structure parameters 30, a second or further semiconductor wafer (12) belonging to the batch is processed in the process appliance (1). An event signal (100) reports, for example, an inspection carried out successfully of the first wafer, so that the following wafers (12) no longer need to be inspected. Using the measured results, the process parameters (31) of the process appliance (1) are automatically readjusted. Events such as maintenance work or parameter drifts in trend maps etc. are detected in control units (8 or 9) and, via the output of an event signal (102), for example in an event database (40), lead to the event-based selection of structure parameters (30′) to be measured and/or to the initiation of a leading wafer (11).

Abstract: While a first leading semiconductor wafer (11) already processed in a process appliance (1) and belonging to a batch is being measured in a microscope measuring instrument (2) in relation to values for the structure parameters 30, a second or further semiconductor wafer (12) belonging to the batch is processed in the process appliance (1). An event signal (100) reports, for example, an inspection carried out successfully of the first wafer, so that the following wafers (12) no longer need to be inspected. Using the measured results, the process parameters (31) of the process appliance (1) are automatically readjusted. Events such as maintenance work or parameter drifts in trend maps etc. are detected in control units (8 or 9) and, via the output of an event signal (102), for example in an event database (40), lead to the event-based selection of structure parameters (30′) to be measured and/or to the initiation of a leading wafer (11).