Abstract: Solar cell module (2000) with a first solar cell string (2121, . . . , 2124), wherein the first solar cell string (2121, . . . , 2124) has at least two solar cells (2121, . . . , 2124) connected in series and arranged in two rows, with a first bypass element (2151) which is connected in parallel with the first solar cell string (2121, . . . , 2124), with a second solar cell string (2221, . . . , 2224) wherein the second solar cell string (2221, . . . , 2224) has at least two solar cells (2221, . . . , 2224) connected in series and arranged in two rows, with a second bypass element (2251) which is connected in parallel to the second solar cell string (2221, . . . , 2224), with a front side encapsulation layer (2002) and a rear side encapsulation layer (2003), wherein the solar cells (2121, . . . , 2124, 2221, . . . , 2224) of the first solar cell string (2121, . . . , 2124) and the second solar cell string (2221, . . .

Abstract: A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.

Abstract: A solar cell with a heterojunction is produced. A first amorphous nano- and/or microcrystalline semiconductor layer is formed on the front face of a crystalline semiconductor substrate to form front face emitter or a front face surface field layer. A second such layer is formed on the rear face of the substrate to form a rear face surface field layer or a rear face emitter. Electrically conductive, transparent front face and rear face electrode layers and a frontal metallic contact layer grid structure are formed. Surface selective frontal PECVD deposition forms an electrically non-conductive, transparent dielectric front face cover layer and with such a thickness to form a closed layer directly on deposition, without additional heat and/or chemical treatment, only on the areas surrounding the frontal contact layer grid structure but not on the frontal contact layer grid structure. Finally, a rear face metallization is formed.