Patents by Inventor Heiko Thiem
Heiko Thiem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9650396Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X?F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.Type: GrantFiled: July 12, 2011Date of Patent: May 16, 2017Assignee: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Patent number: 9315901Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R?, R?=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.Type: GrantFiled: August 13, 2010Date of Patent: April 19, 2016Assignee: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Patent number: 9309595Abstract: The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R?, R?=organic group, X?F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.Type: GrantFiled: August 13, 2010Date of Patent: April 12, 2016Assignee: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Patent number: 9194046Abstract: The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.Type: GrantFiled: February 5, 2010Date of Patent: November 24, 2015Assignee: Evonik Degussa GmbHInventors: Arne Hoppe, Alexey Merkulov, Juergen Steiger, Duy Vu Pham, Yvonne Damaschek, Heiko Thiem
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Patent number: 9115422Abstract: The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L1, L2 and L3, in which the solvent L1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30° C., to processes for preparation thereof and to the use thereof.Type: GrantFiled: February 5, 2010Date of Patent: August 25, 2015Assignee: Evonik Degussa GmbHInventors: Juergen Steiger, Heiko Thiem, Alexey Merkulov, Duy Vu Pham, Yvonne Damaschek, Arne Hoppe
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Patent number: 8907333Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.Type: GrantFiled: March 10, 2008Date of Patent: December 9, 2014Assignees: Evonik Degussa GmbH, Forschungszentrum Karlsruhe GmbHInventors: Frank-Martin Petrat, Heiko Thiem, Sven Hill, Andre Ebbers, Koshi Okamura, Roland Schmechel
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Patent number: 8889476Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.Type: GrantFiled: November 4, 2009Date of Patent: November 18, 2014Assignee: Evonik Degussa GmbHInventors: Heiko Thiem, Juergen Steiger, Alexey Merkulov, Duy Vu Pham, Yilmaz Aksu, Stefan Schutte, Matthias Driess
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Patent number: 8859332Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.Type: GrantFiled: October 26, 2011Date of Patent: October 14, 2014Assignee: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Patent number: 8841164Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ?360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.Type: GrantFiled: November 25, 2010Date of Patent: September 23, 2014Assignee: Evonik Degussa GmbHInventors: Jürgen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Patent number: 8546594Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R?CH(O)COOR?)2(HOR)x(HNR??2)y where X?F, Cl, Br and/or I, R?C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R???C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.Type: GrantFiled: July 7, 2011Date of Patent: October 1, 2013Assignee: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20130221352Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.Type: ApplicationFiled: October 26, 2011Publication date: August 29, 2013Applicant: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20130122647Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ?360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.Type: ApplicationFiled: November 25, 2010Publication date: May 16, 2013Applicant: Evonik Degussa GmbHInventors: Jürgen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20130116463Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In6O2X6(OR)6(R?CH(O)COOR?)2(HOR)x(HNR??2)y where X?F, Cl, Br and/or I, R?C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R??C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R???C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.Type: ApplicationFiled: July 7, 2011Publication date: May 9, 2013Applicant: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20130104773Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X=F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.Type: ApplicationFiled: July 12, 2011Publication date: May 2, 2013Applicant: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20120202318Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R?, R?=organic radical, X?F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.Type: ApplicationFiled: August 13, 2010Publication date: August 9, 2012Applicant: EVONIK DEGUSSA GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20120181488Abstract: The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R?, R?=organic group, X?F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.Type: ApplicationFiled: August 13, 2010Publication date: July 19, 2012Applicant: Evonik Degussa GmbHInventors: Juergen Steiger, Duy Vu Pham, Heiko Thiem, Alexey Merkulov, Arne Hoppe
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Publication number: 20110315982Abstract: The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.Type: ApplicationFiled: February 5, 2010Publication date: December 29, 2011Applicant: EVONIK DEGUSSA GmbHInventors: Arne Hoppe, Alexey Merkulov, Juergen Steiger, Duy Vu Pham, Yvonne Damaschek, Heiko Thiem
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Publication number: 20110309313Abstract: The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L1, L2 and L3, in which the solvent L1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30° C., to processes for preparation thereof and to the use thereof.Type: ApplicationFiled: February 5, 2010Publication date: December 22, 2011Applicant: EVONIK DEGUSSA GmbHInventors: Juergen Steiger, Heiko Thiem, Alexey Merkulov, Duy Vu Pham, Yvonne Damaschek, Arne Hoppe
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Publication number: 20110193084Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.Type: ApplicationFiled: November 4, 2009Publication date: August 11, 2011Applicant: EVPMOL Degussa GmbHInventors: Heiko Thiem, Juergen Steiger, Alexey Merkulov, Duy Vu Pham, Yilmaz Aksu, Stefan Schutte, Matthias Driess
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Publication number: 20100132788Abstract: Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.Type: ApplicationFiled: March 10, 2008Publication date: June 3, 2010Applicants: EVONIK DEGUSSA GMBH, FORSCHUNGSZENTRUM KARLSRUHE GMBHInventors: Frank-Martin Petrat, Heiko Thiem, Sven Hill, Andre Ebbers, Koshi Okamura, Roland Schmechel