Abstract: A two-dimensional image sensor integrated on a semiconductor substrate has a plurality of sensor elements disposed in rows and columns. The sensors in each row and column are individually selected in succession via parallel outputs of a first vertical shift register for readout of the sensor elements. Regulation of the integration time during which charge carriers collect in the sensor elements due to incident light is achieved by selecting the sensor elements in each row a further n times via a second vertical shift register after each readout of the charges optically generated therein and within the time span during which the charges collected in the sensor elements of the next n rows are respectively transferred for readout into the column lines. The further n selections eliminate charges formed in the interim in the column lines so that the integration time of all sensor elements is variably shortened by the duration of readout of the n rows.

Abstract: A two-dimensional semiconductor image sensor has row lines which are selectable by way of a vertical shift register to drive first selection transistors of row and column oriented sensor elements. Column lines are connected to a read-out line by way of switches which are sequentially driven by outputs of a horizontal shift register. The goal is to increase the signal-to-noise ratio and is achieved by the provision of second selection transistors for the sensor elements which are connected in series with the first selection transistors, by way of row selection transistors which connect the row lines to the outputs of the vertical shift register, and by way of a difference-forming stage which is connected to the read-out line.

Abstract: A two-dimensional image sensor integrated on a semiconductor substrate has a plurality of sensor elements disposed in rows and columns. The sensors in each row and column are individually selected in succession via parallel outputs of a vertical shift register for readout of the sensor elements. Regulation of the integration time during which charge carriers collect in the sensor elements due to incident light is achieved by selecting the sensor elements in each even-numbered row for readout a further number of times after an initial readout of the charges optically generated therein, and within the time span during which transfer of the charges from the sensor elements of the next odd-numbered rows to the column lines takes place. The further selections eliminate charges formed in the interim in a particular row.

Abstract: A method for the operation of a CID (Charge Injection Device) arrangement is disclosed. Electric analog signals are input into the CID arrangement by use of first and second capacitors connected to row and column lines. A signal voltage creates a signal charge in the first capacitor which is read into the second capacitor.

Abstract: A method and apparatus for binary coding of sensor signals received from a number of optoelectronic sensor elements employ an evaluator associated with each sensor element for generating binary output signals corresponding to the amount of charge generated by the associated sensor element. Selected pairs of evaluators are connected to an electronic switch, with one of the evaluator outputs serving to actuate the switch for the purpose of undertaking a charge quantity comparison between the associated sensors which are disposed a small distance from one another. Each evaluator includes a converter consisting of a switching transistor and a load element connected in series, and a barrier transistor connecting the output of the associated sensor element with the input of the converter, and a reset transistor for connecting the converter input with a constant voltage source.

Abstract: A circuit for sensor controlled distance measurement is disclosed having two linear image sensors which are positioned to receive corresponding lines of two images derived from an object. The sensor signals are subjected to correlation measurements from which the distance of the object is determined. In the case of circuits of this sort, one endeavors to attain as exact and unfalsified a distance measurement as possible. For this purpose, the sensor signals are digitalized in evaluators, then read via transfer transistors into shift registers which undertake relative position displacements of the sensor signals in a longitudinal direction of the image sensors between individual signal cycles, and are subject to a correlation measurement. The circuit distinguishes itself in that the digital evaluation proceeds completely independently of parameters of the shift register and is thus carried out very precisely. Applications include photographic and electronic cameras.

Abstract: A circuit for sensor-controlled telemetry has two linear image sensors each having a number of opto-electronic sensor elements on which are projected sections of corresponding lines of two separately-obtained images from an object whose range is to be determined and has a single-input evaluator post connected to each sensor element through switching transistors, which evaluators are switchable between two logic states dependent upon whether a voltage generated by accumulated charge in a sensor element is above or below a reference potential. The digitalized signals from each evaluator are serially transmitted through respective associated shift registers to a logic circuit which compares the contents of stages of shift registers for each image sensor for determining coincidence of the digital signals.

Abstract: A photographic or electronic camera is disclosed having an optoelectronic distance meter. Linear sensors are provided and by way of partial aperture diaphragms associated with a lens first and second images are created and projectd onto the image sensors. An evaluating circuit, in dependence upon varied position displacements of the sensor signals, determines a maximum correlation between the signals and an associated position displacement with a corresponding electrical value corresponding to distance. A stringing mirror deflects the path of rays either into the view finder or to an image plane for picture taking. The swinging mirror has apertures positioned to permit the first and second bundles of rays to pass therethrough. Deflection elements are attached to the swinging mirror and are positioned to direct the partial bundles of rays passing through the apertures such that the images are projected onto the image sensors.

Abstract: A monolithically integrated circuit for linear image scanning is coupled through clock pulse-supplied transfer gates to a number of readout charge transfer devices and has an overflow drain zone and an overflow gate disposed between the drain zone and the sensors connected to a clock pulse for selectively permitting transfer of charge between the sensors and the drain zone, with the sensors divided into groups representing image lines. The linear image scanning circuit operated by the interlacing method by which partial images are generated by different groups of sensors. The clock pulse controlling the overflow gate restricts the integration times of the various groups of sensors so that during the scanning of the partial images generated thereby, overlapping of the image data of one line of adjacent partial images is eliminated.

Abstract: An analog-digital converter is disclosed which monitors an output signal of an optoelectronic sensor element for the attainment or non-attainment of a reference charge, whereupon switchover occurs from one logic signal to the other. An exclusion to a large extent of parameter or characteristic tolerance effects on the result of the evaluation is achieved. For this purpose, the converter contains an inverter, the input of which is connected via a reset transistor with a constant voltage source and which is connected via a potential barrier defining transistor with the output of the sensor element. The converter shows no dependence upon fluctuations of the inverter. Applications include distance measuring devices, and photographic and electronic cameras.

Abstract: A circuit for sensor-controlled distance measurement with two linear image sensors is disclosed. These sensors are exposed to lines corresponding to two images derived from one object. The sensor signals are subjected to correlation measurements, from which the range of the object is determined. An exposure-measuring circuit determines the optimum integration time of the sensor elements. In the case of such circuits, one sets as exact a distance measurement as possible. For this purpose, comparing sensor elements of the exposure-measuring circuit, which are provided with a mean value of the exposure of many sensor locations, are designed such that they extend only over a part of the sensor lines. They are arranged in a sequence which runs along the entire sensor line. A separate controlling of the optimum integration time proceeds over individual line portions. A range of application for the invention encompasses photographic and electronic cameras.

Abstract: A color image scanning circuit has a linear image sensor with photodiode sensor elements disposed in two adjacent rows integrated on a semiconductor substrate. The sensor elements are divided into groups with all sensors in each group being covered with one of several different color filters. An overflow gate is provided on the substrate between the rows of sensor elements for each group of sensor elements and are provided with individually variable clock pulse voltages for selectively varying the integration time of each group of sensor elements. By selective dimensioning of the respective integration times, compensation of the varying spectral light-sensitivities of the sensor elements can be accurately and simply achieved for generating balanced output signals for each sensor element group.

Abstract: A circuit for sensor-controlled distance measurement with two linear image sensors is disclosed. These sensors are exposed to lines corresponding to two images derived from one object. The sensor signals are subjected to correlation measurements, from which the range of the object is determined. An exposure-measuring circuit determines the optimum integration time of the sensor elements. A comparing sensor element of the exposure-measuring circuit is provided in a strip-shape and co-integrated on the semiconductor member. It is positioned for exposure to an optically generated charge quantity which corresponds to a plurality of sensor elements in at least one of the image sensors. The comparison sensor element is designed as a strip-shaped photodiode arranged next to the sensor element row in at least one of the image sensors.

Abstract: An arrangement for photoelectric scanning of color pictures in which scanning light beams are evaluated in three or more color filters according to different sensitivity curves. Photoelectric receivers then drive evaluation signals which are coded into three color value signals. In such arrangements, it is desired to obtain constructions which are as simple, economic and space-saving as possible, as well as providing a great sensitivity to light. According to the invention, a charge transfer device image sensor has two image point rows lying adjacent one another and aligned in two lines of the color picture. The image points of the image sensor are combined into groups to which individual color filters and read-out channels are respectively assigned. In the read-out operation, the image information of one line are intermediately stored for the duration of one line.

Abstract: An arrangement for photoelectric scanning of color pictures evaluates scanning light beams in three or more color filters according to different sensitivity curves. Photoelectric receivers then derive evaluation signals which are coded in three color value signals. In such arrangements, construction which is as simple, as economical and as space saving as possible is desired. Linear charge transfer device image sensors are respectively aligned to one another and the same line of the color picture. The image points of at least one image sensor are divided into two or more groups to which color filters of different, group-specific evaluation curves and group-specific charge coupled devices are assigned at whose outputs separate evaluation signals occur. The area of application is in color film scanners in which a color television screen serves as the reproduction device.

Abstract: The invention relates to an optoelectronic sensor with at least one sensor element according to the principle of carrier injection (CID), whereby the surface of a doped semiconductor body is faced by two closely adjoining electrodes insulated from one another and from the semiconductor surface by a thin insulation layer that are controllable via separate control circuits. The semiconductor body contains a more strongly doped area having the type of the semiconductor doping on its surface below one of the electrodes, which area extends slightly into the semiconductor surface lying below the other electrode. Thereby, a narrow potential barrier is formed between the two electrodes, for example, between a line electrode and a column electrode. When an optically generated charge under one electrode is displaced under the other electrode, then this narrow potential barrier prevents a flow back of the charge under the discharged electrode.

Abstract: A linear row of MIS capacitors as sensor elements are arranged on a doped semiconductor body. The MIS capacitors are separated in the semiconductor body by a potential threshold for the optically generated minority carriers. The potential threshold, for example, can be generated by means of a field shield electrode. By means of transfer gates the sensor elements are alternately coupled with CCD shift registers. An oppositely doped overflow drain which is contacted with an overflow electrode connects to the narrow side of each sensor element which is opposite the corresponding transfer gate. Each overflow drain is separated from the sensor elements by a potential threshold for the minority carriers which is smaller than the potential threshold between the sensor elements themselves. A varying thickness of the oxide layer, a varying doping and/or parts of the field shield electrode can serve for adjusting the potential threshold.

Abstract: A thermal element arrangement having a plurality of thermal elements connected in series, and in which an insulation layer has thereon a plurality of metal conductor paths situated on the semiconductor substrate. Each thermal element has one of the metal conductor paths forming a first leg and a semiconductor region forming a second leg. A thermal contact is included having a metal semiconductor contact with the respective semiconductor regions. The semiconductor substrate is less than 10 .mu.m thick in the region where the thermal contacts which are to be heated up is located. Elsewhere, the substrate has a thickness of more than 200 .mu.m which is in that region in which there are situated the contacts which are to be kept cold during the operation of the arrangement. One preferred arrangement has the thermal contacts to be heated during operation surrounded in a star-shaped manner by thermal contacts which are to be kept cold.

Abstract: A lateral bipolar transistor has a semiconductor substrate of first conductivity type with an epitaxial layer arranged thereon of second conductivity type. Collector and emitter zones of first conductivity type are laterally arranged in the epitaxial layer. A base terminal contact zone connects with the epitaxial layer and a buried layer of second conductivity type is placed in the epitaxial layer below the emitter and collector zones. The buried layer has a doping concentration higher than the epitaxial layer so that a minority carrier current emanating from the emitter zone in a vertical direction is minimized. A doping profile of the emitter zone and portions of the base adjacent thereto is provided such that an additional potential barrier is created adjacent to and directly beneath the emitter zone in order to further minimize minority charge carriers emanating at a vertical direction from the emitter zone.

Abstract: A lateral bipolar transistor has a silicon film which is epitaxially deposited on an electrical insulating substrate. The silicon film is doped with impurities of a first conductivity type such that a portion of the film may be utilized as a base zone. Within the base zone an emitter zone and a collector zone are formed of the second conductivity type. A highly doped zone of the second conductivity type is produced by deep implantation at a position which is contiguous and below the base zone, below the emitter and collector zones, and at a boundary between the silicon film and the electrical insulating substrate. An insulating zone over the film and a conductive layer over the base zone are also provided. The conductive film over the base zone together with the highly doped zone below and contiguous with the base minimize surface recombination and increase device gain.