Abstract: Disclosed in this specification is a lead-free soldering alloy made of gold, tin and indium. The tin is present in a concentration of 17.5% to 20.5%, the indium is present in a concentration of 2.0% to 6.0% and the balance is gold and the alloy has a melting point between 290° C. and 340° C. and preferably between 300° C. and 340° C. The soldering alloy is particularly useful for hermetically sealing semiconductor devices since the melting temperature is sufficiently high to permit post-seal heating and sufficiently low to allow sealing of the semiconductor without causing damage.

Abstract: Disclosed in this specification is a lead-free soldering alloy made of gold, tin and indium. The tin is present in a concentration of 17.5% to 20.5%, the indium is present in a concentration of 2.0% to 6.0% and the balance is gold and the alloy has a melting point between 290° C. and 340° C. and preferably between 300° C. and 340° C. The soldering alloy is particularly useful for hermetically sealing semiconductor devices since the melting temperature is sufficiently high to permit post-seal heating and sufficiently low to allow sealing of the semiconductor without causing damage.

Abstract: The present invention provides alloys for forming sputtered under bump metallization seed layers and electroplated or otherwise deposited bump metallurgy. The alloys of the present invention are comprised of silver with gold or palladium, copper with gold, or gold with nickel or palladium which provide suitable sputtering and electrical characteristics and resistance to corrosion and tarnishing. The invention further provides for semiconductor devices made from metal alloys for UBM and bump metallurgy, and for a method of making such semiconductor devices.

Abstract: An optical data recording and storage medium including at least one reflective layer formed from a copper alloy that contains, in addition to copper, about 0.1 to about 3.0 wt. %, based on the total weight of alloy, of samarium (Sm) and may further include from about 0.1 to about 5.0 wt. % titanium (Ti).

Abstract: An optical data recording and storage medium that includes a reflective layer formed from a silver alloy that contains, in addition to silver, about 0.2 to about 1.0 wt. %, based on the total weight of alloy, of samarium (Sm), about 0.2 to about 2.0 wt. % of copper (Cu), about 0.1 to about 0.3 wt. % of titanium (Ti), and about 0.2 to about 0.8 wt .% of manganese (Mn).

Abstract: An optical data recording and storage medium includes a thin semi-reflective layer and a highly reflective layer, wherein the semi-reflective layer is formed from a silver alloy containing pure silver and not more than about 0.1 to about 1.0 wt. % of tin, based on the total weight of alloy, with the tin deposited substantially entirely at the grain boundaries of the silver in the semi-reflective layer. The silver alloy may also include along with the tin about 0.1 to about 1.0 wt each of copper, based on the total weight of alloy, without defeating the benefit of the tin.

Abstract: An optical data recording and storage medium includes a reflective layer formed from a silver alloy that contains, in addition to silver, about 0.1 to about 4.0 wt. %, based on the total weight of alloy, of samarium (Sm).

Abstract: A method of making an integral plated and solder clad cover lid for electronic packages is disclosed. The cover lid is plated and or clad with a first corrosion resistant and solderable material and is clad with a solder material on one side. The cladded substrate is stamped and then plated with a second corrosion resistant and solderable material. The second material is subsequently sintered and preferentially diffused into the solder material resulting in a visual distinction between the solder side of the cover lid and the backing side.