Abstract: The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In order to reduce not only the static but also the dynamic loss of the power semiconductor foreign atoms are used in the stop-zone. The foreign atoms have at least one energy level within the band gap of the semiconductor and at least 200 meV away from the conduction band and valence band of the semiconductor.

Abstract: A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

Abstract: A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.

Abstract: A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the surface through the base zone into the bulk inner portion of the one conduction type and at a bottom surface a collector zone that includes a collector electrode overlying a collector layer of the opposite conduction type overlying a field stop layer heavily doped of the opposite conduction type overlying the inner portion lightly doped of the one conduction type. Each of the collector layer and the field stop layer is less than 2 microns in thickness and the collector layer is used to inject minority carriers into the inner zone when appropriately biased.

Abstract: A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

Abstract: The power semiconductor element has an emitter region and a stop zone in front of the emitter region. The conductivities of the emitter region and of the stop zone are opposed to one another. In order to reduce not only the static but also the dynamic loss of the power semiconductor foreign atoms are used in the stop-zone. The foreign atoms have at least one energy level within the band gap of the semiconductor and at least 200 meV away from the conduction band and valence band of the semiconductor.

Abstract: A semiconductor component having a control structure for modulating the conductivity of a channel region wherein a small-area gate electrode of the proposed component covers the substrate only over a length L.sub.gd .apprxeq.L.sub.dep (L.sub.dep :=width of the space-charge zone in the substrate). An auxiliary electrode conductively connected to the source metallization and extending up to the edge of the symmetry unit is embedded in the gate oxide and is arranged spaced from the gate electrode. It sees to a comparatively uniform field distribution in the edge region of the gate electrode and thus prevents the electrical field strength in the semiconductor from reaching the critical value of approximately 10.sup.5 V/cm that triggers surge ionization.

Abstract: In IGBTs or, respectively, MOSFETs a parasitic junction-FET effect can be nearly avoided on the basis of an insulation layer introduced between the two base zones and into which an electrode is additionally embedded. The on-resistance is lowered as a result thereof. In an advantageous development, a potential activation of the parasitic bipolar structure (latch-up) can also be prevented.

Abstract: Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long charge carrier life expectancy. An advantage is achieved that the controllable power semiconductor component has a temperature-independent tail current, despite a low on-state dc resistance and a high blocking voltage.

Abstract: Controllable power semiconductor components such as, for example, IGBTs and thyristors are provided, which, compared to known components, have a relatively lightly doped n-buffer zone, a relatively flat p-emitter, and an n-base having a comparatively long charge carrier life expectancy. An advantage is achieved that the controllable power semiconductor component has a temperature-independent tail current, despite a low on-state dc resistance and a high blocking voltage.

Abstract: A method and a circuit arrangement for generating setting signals for signal generators of a traffic signal system, particularly of a street traffic signal system, upon employment of indications of time intervals between mutually hostile traffic flows contained in a time interval matrix are discussed. The time intervals are read from the time interval matrix for each entry signal group and subtracted from the greatest time interval value which greatest time interval value is reduced in value in cyclical succession. When this value is reduced to zero or, respectively, when a zero difference is determined in the course of the difference formations, then appropriate setting signals for the signal generators of the traffic signal system are emitted.

Abstract: A circuit arrangement for monitoring the state of signal systems, particularly traffic light systems monitors different signal states as to the admissability or inadmissibility thereof in a simple manner without the necessity of carrying out manual wiring manipulations given a change of the signal conditions in adaptation to changed conditions or given an expansion of the signal system to be monitored. For this purpose, test signals which indicate test signal states are fixed in a memory and are processed with the signals indicating the respectively existing actual signal state of the signal transmitters in at least one microprocessor in such a manner that each signal indicating an actual state is compared with all test signals which are called up step-by-step in succession from the memory.

Abstract: A method and apparatus for securing the intermediate protective time periods at an intersection in a street traffic signal system to provide adequate safety protection between respective traffic flows, in which, following the end of the duration of the green light time period of individual signal of the respective traffic flows to be independently controlled, the time elapsing thereafter, representing an actual time value, is totaled and compared with predetermined theoretical protective time values for traffic flows antagonistic to the green light signal to be connected, and upon attaining and/or exceeding the predetermined values, an associated connect command to said last-mentioned green light signal is released, and adding, at intervals somewhat smaller than those corresponding to the time rhythm of the traffic signal, all of said theoretical time values, thus forming an additional actual total time value, which is compared with a theoretical total time value therefor, and in the event an error is ascerta