Patents by Inventor Heinrich Dambkes

Heinrich Dambkes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Modulation doped field effect transistor with doped Si.sub.x Ge.sub.1-x -intrinsic Si layering
    Patent number: 4710788
    Abstract: A modulation doped field effect transistor (MODFET) having an n-conductive channel. This channel is produced by a heterostructure formed on a silicon substrate and composed of a modulation doped Si.sub.1-x Ge.sub.x layer as well as an undoped Si layer.
    Type: Grant
    Filed: December 1, 1986
    Date of Patent: December 1, 1987
    Assignee: Licentia Patent-Verwaltungs-GmbH
    Inventors: Heinrich Dambkes, Hans-J. Herzog, Helmut Jorke