Patents by Inventor Heinz Bach
Heinz Bach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10593799Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.Type: GrantFiled: August 10, 2018Date of Patent: March 17, 2020Assignee: Infineon Technologies AGInventors: Markus Zundel, Karl-Heinz Bach, Peter Brandl, Andrew Christopher Graeme Wood
-
Publication number: 20190334000Abstract: A transistor component includes at least one transistor cell having: a drift region, a source region, a body region and a drain region in a semiconductor body, the body region being arranged between the source and drift regions, and the drift region being arranged between the body and drain regions; a gate electrode arranged adjacent to the body region and dielectrically isolated from the body region by a gate dielectric; and a field electrode arranged adjacent to the drift region and dielectrically isolated from the drift region by a field electrode dielectric. The field electrode dielectric has a thickness that increases in a direction toward the drain region. The drift region has, in a mesa region adjacent to the field electrode, a doping concentration that increases in the direction toward the drain region.Type: ApplicationFiled: April 24, 2019Publication date: October 31, 2019Inventors: Markus Zundel, Karl-Heinz Bach, Peter Brandl, Franz Hirler, Andrew Christopher Graeme Wood
-
Patent number: 10453915Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.Type: GrantFiled: March 30, 2018Date of Patent: October 22, 2019Assignee: Infineon Technologies AGInventors: Andreas Meiser, Karl-Heinz Bach, Christian Kampen, Dietmar Kotz, Andrew Christopher Graeme Wood, Markus Zundel
-
Publication number: 20190051749Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.Type: ApplicationFiled: August 10, 2018Publication date: February 14, 2019Inventors: Markus Zundel, Karl-Heinz Bach, Peter Brandl, Andrew Christopher Graeme Wood
-
Publication number: 20180286944Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.Type: ApplicationFiled: March 30, 2018Publication date: October 4, 2018Inventors: Andreas Meiser, Karl-Heinz Bach, Christian Kampen, Dietmar Kotz, Andrew Christopher Graeme Wood, Markus Zundel
-
Patent number: 9847387Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.Type: GrantFiled: May 31, 2016Date of Patent: December 19, 2017Assignee: Infineon Technologies AGInventors: Markus Zundel, Karl-Heinz Bach, Andrew Christopher Graeme Wood
-
Patent number: 9812563Abstract: A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.Type: GrantFiled: June 14, 2016Date of Patent: November 7, 2017Assignee: Infineon Technologies AGInventors: Ralf Siemieniec, Markus Zundel, Karl-Heinz Bach, Franz Hirler, Christian Kampen, Werner Schustereder
-
Publication number: 20160365441Abstract: A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.Type: ApplicationFiled: June 14, 2016Publication date: December 15, 2016Inventors: Ralf Siemieniec, Markus Zundel, Karl-Heinz Bach, Franz Hirler, Christian Kampen, Werner Schustereder
-
Publication number: 20160284795Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.Type: ApplicationFiled: May 31, 2016Publication date: September 29, 2016Inventors: Markus Zundel, Karl-Heinz Bach, Andrew Christopher Graeme Wood
-
Patent number: 9391192Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.Type: GrantFiled: October 28, 2014Date of Patent: July 12, 2016Assignee: Infineon Technologies AGInventors: Markus Zundel, Karl-Heinz Bach, Andrew Christopher Graeme Wood
-
Publication number: 20150115353Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.Type: ApplicationFiled: October 28, 2014Publication date: April 30, 2015Inventors: Markus Zundel, Karl-Heinz Bach, Andrew Christopher Graeme Wood
-
Publication number: 20100148262Abstract: Resistors, semiconductor devices, and methods of manufacture thereof are disclosed. In one embodiment, a method of fabricating a resistor includes forming a semiconductive material over a workpiece, and patterning at least the semiconductive material, forming a gate of a transistor in a first region of the workpiece and forming a resistor in a second region of the workpiece. At least one substance is implanted into the semiconductive material of the gate of the transistor or the resistor so that the semiconductive material is different for the gate of the transistor and the resistor.Type: ApplicationFiled: December 17, 2008Publication date: June 17, 2010Inventors: Knut Stahrenberg, Karl-Heinz Bach, Manfred Eller, Roland Hampp, Jin-Ping Han, O Sung Kwon
-
Patent number: 7318863Abstract: The invention relates to an azo pigment preparation containing a) at least one azo pigment, b) a resin based on colophonium or modified colophonium with an acid value equal to or higher than 320 mg KOH/g, and c) an ammonium salt of a sulfonated diaryl yellow pigment.Type: GrantFiled: October 5, 2004Date of Patent: January 15, 2008Assignee: Clariant Produkte (Deutschland) GmbHInventors: Heinz Bach, Ulrich Ott, Rainer Winter
-
Publication number: 20070204762Abstract: The invention relates to an azo pigment preparation containing a) at least one azo pigment, b) a resin based on colophonium or modified colophonium with an acid value equal to or higher than 320 mgKOH/g, and c) an ammonium salt of a sulfonated diaryl yellow pigment.Type: ApplicationFiled: October 5, 2004Publication date: September 6, 2007Inventors: Heinz Bach, Ulrich Ott, Rainer Winter
-
Patent number: 7118623Abstract: The invention relates to a diaryl yellow pigment preparation, including a) at least one diaryl yellow pigment b) at least one natural resin on the basis of rosin or modified rosin, c) at least one compound of formula (1), and d) an aluminum, zinc, manganese or iron compound in an amount of from 0.1 to 8% by weight (calculated as a metal cation), based on component b). The inventive preparations are suitable for a variety of applications, among them the production of printing inks, especially offset printing inks.Type: GrantFiled: February 28, 2002Date of Patent: October 10, 2006Assignee: Clariant GmbHInventors: Heinz Bach, Ulrich Ott, Rainer Winter, Thomas Heber, Rolf Kaiser
-
Publication number: 20040220391Abstract: The invention relates to a diaryl yellow pigment preparation, including a) at least one diaryl yellow pigment. b) at least one natural resin on the basis of rosin or modified rosin, c) at least one compound of formula (1), and d) an aluminum, zinc, manganese or iron compound in an amount of from 0.1 to 8% by weight (calculated as a metal cation), based on component b). The inventive preparations are suitable for a variety of applications, among them the production of printing inks, especially offset printing inks.Type: ApplicationFiled: September 4, 2003Publication date: November 4, 2004Inventors: Heinz Bach, Ulrich Ott, Rainer Winter, Thomas Heber, Rolf Kaiser