Abstract: An improved method for use in fabricating individual semiconductor radiation detectors on a chip is characterized by forming generally V-shaped grooves converging toward one another from opposite sides of the chip into the thickness dimension thereof. The grooves meet within the chip and serve to separate individual detectors.

Abstract: A cryogenic container with low thermal losses for infra-red detecting devices, with integrated feed-through connections, wherein said container consists of two elements adapted to have their outer walls joined, the two walls having two edges with surfaces facing one another to define an annular zone arranged to receive vacuum sealed feed-through connections in the form of a substrate on which a multiplicity of conductors is formed by micro-circuitry techniques. The conductors extend through the annular zone and project both inward and outward of the outer wall. A flexible element is provided for contacting an active element inside the cryostat with the conductors. The flexible element consists of a layer of plastic material supporting a multiplicity of conductive tracks.

Abstract: A process for manufacturing semiconductor devices, particularly monocrystalline structures by sputter etching, wherein the electric discharge is effected in a rarefied atmosphere, the components of which are Argon and Hydrogen, or Argon and H.sub.2 O, or inert gas and a gas developing Hydrogen ions.