Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: The present invention provides a method of polishing a semiconductor device comprising, polishing the semiconductor device with a polishing pad, the polishing pad comprising, a polymeric matrix and a dissolvable substance. The dissolvable substance is located at a work surface of the polishing pad and in a subsurface proximate the work surface. The method further comprises dissolving the dissolvable substance at the work surface while polishing the semiconductor device and wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes a new work surface that polishes the semiconductor device.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: The present invention provides a method of polishing a semiconductor device comprising, polishing the semiconductor device with a polishing pad, the polishing pad comprising, a polymeric matrix and a dissolvable substance. The dissolvable substance is located at a work surface of the polishing pad and in a subsurface proximate the work surface. The method further comprises dissolving the dissolvable substance at the work surface while polishing the semiconductor device and wearing away the polishing pad while polishing the semiconductor device such that the subsurface becomes a new work surface that polishes the semiconductor device.

Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: A polishing composition for CMP to remove a noble metal has a substance forming ligands with the noble metal for dissolution in the polishing composition, abrasive particles, and a surfactant comprising a dispersant of the abrasive particles to minimize formation of agglomerates of the abrasive particles, the abrasive particles being coated by the surfactant to provide surfactant coated abrasive particles that minimize scratching of a surface being abraded by the surfactant coated abrasive particles during CMP.

Abstract: A polishing pad is provided which is comprised of vertically oriented hollow fibers. Such pads can be produced by electrostatically flocking fibers onto a substrate.

Abstract: An article or polishing pad for altering a surface of a workpiece includes a polymeric matrix having a work surface and a subsurface proximate to the work surface. When the article is in contact with a working environment, the work surface is made relatively softer than the subsurface as a result of exposure to the working environment. As the work surface wears during use, the subsurface immediately adjacent to the work surface becomes exposed to the working environment and becomes the relatively softer work surface. As a result, the relatively softer work surface is continuously regenerated. In an alternative embodiment, an article for altering a surface of a workpiece includes a work surface having a texture, and the texture includes artifacts arranged in a fractal pattern.

Abstract: The polishing composition of this invention is useful for chemical mechanical polishing of substrates containing noble metals such as platinum and contains sulfur-containing compounds at about 0.1% to 50% by weight of the polishing composition, abrasive particles at about 0.5% to about 55% by weight of the polishing composition and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: A polishing pad for polishing hard surfaces such as glass and silicon wafers and a method of polishing using such a polishing pad.

Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is selected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: A fixed abrasive, chemical-mechanical polishing system which is particularly well suited for use in the manufacture of semiconductor devices, memory disks or the like.

Abstract: This invention is directed to a polishing pad for chemical mechanical polishing of substrates, for example, the surface of electrical devices such as semiconductors or other substrates; wherein the pad comprises a polyurethane that is the reaction product of an organic polyisocyanate and 1,3 propane diol; preferably, the pad has a porous structure and more preferably has a microporous structure.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A polishing pad having a uniform, continuously interconnected porous surface. The pad is produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted at a pressure in excess of 100 psi and in a mold having the desired final pad dimensions. In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A polishing pad having a substantially uniform, continuously interconnected porous surface. The pad can be produced by pressure sintering powder compacts of thermoplastic polymer at a temperature above the glass transition temperature but not exceeding the melting point of the polymer. The sintering process is conducted in a mold at a pressure in excess of 100 psi (0.07 MPa). In a preferred version, a mixture of two polymer powders is used, where one polymer has a lower melting point than the other.

Abstract: A polishing pad for polishing hard surfaces such as glass and silicon wafers and a method of polishing using such a polishing pad.

Abstract: The present invention provides a polishing pad fabricated from both polyester and polyether polyurethanes. Methods for manufacturing the pads and methods for use of the pads for polishing are also provided.