Patents by Inventor Heinz Felzer
Heinz Felzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11952654Abstract: A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.Type: GrantFiled: October 22, 2019Date of Patent: April 9, 2024Assignee: EVATEC AGInventors: Dominik Jaeger, Thomas Tschirky, Marco Rechsteiner, Heinz Felzer, Hartmut Rohrmann
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Patent number: 11551950Abstract: A substrate processing apparatus includes a base with a process-side surface and a substrate support arranged on the process-side surface and designed to carry a substrate at its periphery. The periphery, more specifically the plane defined by the periphery, is spaced apart from the process-side surface. The substrate processing apparatus also includes a radiation sensor adapted to measure electromagnetic radiation arranged on a side of a back-side surface of the base. A radiation channel is arranged between the radiation sensor and the periphery of the substrate support, more specifically between the radiation sensor and the plane defined by the periphery, wherein the radiation channel is at least partially permeable to electromagnetic radiation.Type: GrantFiled: November 27, 2018Date of Patent: January 10, 2023Assignee: EVATEC AGInventors: Hartmut Rohrmann, Heinz Felzer, Dominik Jaeger, Hubert Breuss
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Publication number: 20210381099Abstract: A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.Type: ApplicationFiled: October 22, 2019Publication date: December 9, 2021Inventors: Dominik Jaeger, Thomas Tschirky, Marco Rechsteiner, Heinz Felzer, Hartmut Rohrmann
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Publication number: 20200388517Abstract: A substrate processing apparatus includes a base with a process-side surface and a substrate support arranged on the process-side surface and designed to carry a substrate at its periphery. The periphery, more specifically the plane defined by the periphery, is spaced apart from the process-side surface. The substrate processing apparatus also includes a radiation sensor adapted to measure electromagnetic radiation arranged on a side of a back-side surface of the base. A radiation channel is arranged between the radiation sensor and the periphery of the substrate support, more specifically between the radiation sensor and the plane defined by the periphery, wherein the radiation channel is at least partially permeable to electromagnetic radiation.Type: ApplicationFiled: November 27, 2018Publication date: December 10, 2020Inventors: Hartmut Rohrmann, Heinz Felzer, Dominik Jaeger, Hubert Breuss
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Publication number: 20190252166Abstract: A sputtering source includes two facing plate shaped targets and a magnet arrangement along each of the targets. An open coating outlet area from the reaction space between the targets is limited by facing rims of the two plate shaped targets. Catcher plates along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area, thereby restricting the open coating outlet area as limited by the mutually facing rims of the two plate shaped targets.Type: ApplicationFiled: October 3, 2017Publication date: August 15, 2019Inventors: Heinz Felzer, Dominik Jager, Michael Cheseaux, Hartmut Rohrmann
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Patent number: 9607831Abstract: A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.Type: GrantFiled: February 27, 2015Date of Patent: March 28, 2017Assignee: EVATEC AGInventors: Lorenzo Castaldi, Martin Kratzer, Heinz Felzer, Robert Mamazza, Jr., Bernd Heinz
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Patent number: 9478420Abstract: A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate.Type: GrantFiled: December 15, 2014Date of Patent: October 25, 2016Assignee: EVATEC AGInventors: Lorenzo Castaldi, Martin Kratzer, Heinz Felzer, Robert Mamazza, Jr.
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Publication number: 20150179430Abstract: A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminium film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminium film by a sputtering method under an atmosphere of Nitrogen and Argon.Type: ApplicationFiled: February 27, 2015Publication date: June 25, 2015Inventors: Lorenzo Castaldi, Martin Kratzer, Heinz Felzer, Robert Mamazza, JR., Bernd Heinz
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Publication number: 20150140792Abstract: A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; holding the substrate away from a substrate facing surface of a heater by a predetermined distance; heating the substrate to a temperature by using the heater whilst the substrate is held away from the substrate facing surface of the heater, and depositing a Group III nitride semiconductor film onto the conditioned surface of the substrate by a physical vapour deposition method whilst the substrate is held away from the substrate facing surface of the heater and forming an epitaxial Group III nitride semiconductor film with N-face polarity on the conditioned surface of the substrate.Type: ApplicationFiled: December 15, 2014Publication date: May 21, 2015Inventors: Lorenzo Castaldi, Martin Kratzer, Heinz Felzer, Robert Mamazza, JR.
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Patent number: 8268142Abstract: Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.Type: GrantFiled: December 22, 2009Date of Patent: September 18, 2012Assignee: OC Oerlikon Balzers AGInventors: Jürgen Weichart, Heinz Felzer
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Publication number: 20100155238Abstract: Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.Type: ApplicationFiled: December 22, 2009Publication date: June 24, 2010Applicant: OC OERLIKON BALZERS AGInventors: Jürgen Weichart, Heinz Felzer