Patents by Inventor Heinz J. Rath

Heinz J. Rath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the manufacture of silicon of large surface area bonded to a substrate and silicon-bonded substrates so made
    Patent number: 4141764
    Abstract: Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.
    Type: Grant
    Filed: October 11, 1977
    Date of Patent: February 27, 1979
    Assignee: Wacker Chemitronic Gesellschaft fur Elektronik-Grundstroffe mbH
    Inventors: Bernhard Authier, Heinz J. Rath, Dietrich Schmidt, Johann Hofer