Patents by Inventor Heinz Josef Nentwich

Heinz Josef Nentwich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for ion beam delayering of a sample and control thereof
    Patent number: 11214874
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: January 4, 2022
    Assignee: TECHINSIGHTS INC.
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • METHOD AND SYSTEM FOR ION BEAM DELAYERING OF A SAMPLE AND CONTROL THEREOF
    Publication number: 20200318242
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • Method and system for ion beam delayering of a sample and control thereof
    Patent number: 10689763
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: June 23, 2020
    Assignee: TECHINSIGHTS INC.
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • Method and system for ion beam delayering of a sample and control thereof
    Patent number: 10550480
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: February 4, 2020
    Assignee: TECHINSIGHTS INC.
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • METHOD AND SYSTEM FOR ION BEAM DELAYERING OF A SAMPLE AND CONTROL THEREOF
    Publication number: 20170096741
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Application
    Filed: December 14, 2016
    Publication date: April 6, 2017
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • METHOD AND SYSTEM FOR ION BEAM DELAYERING OF A SAMPLE AND CONTROL THEREOF
    Publication number: 20170089813
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Application
    Filed: December 14, 2016
    Publication date: March 30, 2017
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • Method and system for ion beam delayering of a sample and control thereof
    Patent number: 9534299
    Abstract: There is provided a method, system and computer program product to delayer a layer of a sample, the layer comprising one or more materials, in an ion beam mill by adjusting one or more operating parameters of the ion beam mill and selectively removing each of the one or more materials at their respective predetermined rates. There is also provided a method and system for obtaining rate of removal of a material from a sample in an ion beam mill.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: January 3, 2017
    Assignee: TECHINSIGHTS INC.
    Inventors: Robert K. Foster, Christopher Pawlowicz, Jason Abt, Ian Jones, Heinz Josef Nentwich
  • Gaseous plasma etching of aluminum and aluminum oxide
    Patent number: 4030967
    Abstract: Gaseous plasma etching of aluminum with conventional plasma etch gases has not hitherto been commercially possible due to a layer of aluminum oxide (Al.sub.2 O.sub.3) which forms on freshly prepared aluminum surfaces. By first plasma etching in the presence of a gaseous trihalide, preferably in a so-called "pancake" or radial-flow type reactor, the oxide layer is removed. Aluminum etching can then continue, either with or without plasma conditions, depending upon the etch gas used.
    Type: Grant
    Filed: August 16, 1976
    Date of Patent: June 21, 1977
    Assignee: Northern Telecom Limited
    Inventors: Sidney Ivor Joseph Ingrey, Heinz Josef Nentwich, Robert Gordon Poulsen