Patents by Inventor Heinz-Peter Wirtz
Heinz-Peter Wirtz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961764Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: April 15, 2021Date of Patent: April 16, 2024Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20220093417Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: December 6, 2021Publication date: March 24, 2022Applicant: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 11222793Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: GrantFiled: November 19, 2019Date of Patent: January 11, 2022Assignee: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20210233815Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: April 15, 2021Publication date: July 29, 2021Applicant: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 11011423Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: November 29, 2018Date of Patent: May 18, 2021Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20200090954Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: November 19, 2019Publication date: March 19, 2020Applicant: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Method of depositing encapsulant along sides and surface edge of semiconductor die in embedded WLCSP
Patent number: 10515828Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: GrantFiled: September 23, 2016Date of Patent: December 24, 2019Assignee: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu -
Publication number: 20190109048Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: November 29, 2018Publication date: April 11, 2019Applicant: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 10181423Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: January 24, 2017Date of Patent: January 15, 2019Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20170133270Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: January 24, 2017Publication date: May 11, 2017Applicant: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 9620413Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: December 5, 2013Date of Patent: April 11, 2017Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20170011936Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: September 23, 2016Publication date: January 12, 2017Applicant: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 9496195Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: GrantFiled: March 15, 2013Date of Patent: November 15, 2016Assignee: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20140091455Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: December 5, 2013Publication date: April 3, 2014Applicant: STATS ChipPAC, Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojioan Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20140091482Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: March 15, 2013Publication date: April 3, 2014Applicant: STATS CHIPPAC, LTD.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 8222722Abstract: An integrated circuit package including: a substrate having front connection pads on a front face, an integrated circuit die linked to the front face of the substrate and having front connection pads, connection wires for connecting selected front pads of the integrated circuit die to selected front pads of the substrate, first connection balls on selected front connection pads of the integrated circuit die, and second connection balls on selected front connection pads of the substrate. An integrated circuit device including a second substrate connected to the connection balls of the integrated circuit package.Type: GrantFiled: September 11, 2009Date of Patent: July 17, 2012Assignee: ST-Ericsson SAInventors: Nedyalko Slavov, Heinz-Peter Wirtz, Thomas Villiger, Kwei-Kuan Kuo
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Patent number: 8125074Abstract: A laminated substrate for an integrated circuit package, including a core layer and at least one build-up layer located above only one side of said core layer. An integrated circuit package, including a laminated substrate and including an integrated circuit die placed above the side build-up layer.Type: GrantFiled: September 11, 2009Date of Patent: February 28, 2012Assignee: ST-Ericsson SAInventors: Nedyalko Slavov, Heinz-Peter Wirtz, Kwei-Kuan Kuo
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Publication number: 20110064362Abstract: An integrated circuit device or package comprising: a laminated substrate, at least an electro-optical element at least partially inserted in the laminated substrate, and at least an optical wave-guide element at least partially inserted in the laminated substrate and optically coupled to the electro-optical element. An integrated circuit system comprising an integrated circuit device and a mounting plate carrying an optical wave-guide part or fiber.Type: ApplicationFiled: September 11, 2009Publication date: March 17, 2011Applicant: ST-ERICSSON SAInventors: Nedyalko Slavov, Heinz-Peter Wirtz, Kwei-Kuan Kuo
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Publication number: 20110061917Abstract: A laminated substrate for an integrated circuit package, including a core layer and at least one build-up layer located above only one side of said core layer. An integrated circuit package, including a laminated substrate and including an integrated circuit die placed above the side build-up layer.Type: ApplicationFiled: September 11, 2009Publication date: March 17, 2011Applicant: ST-ERICSSON SAInventors: Nedyalko Slavov, Heinz-Peter Wirtz, Kwei-Kuan Kuo
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Publication number: 20110062576Abstract: An integrated circuit package including: a substrate having front connection pads on a front face, an integrated circuit die linked to the front face of the substrate and having front connection pads, connection wires for connecting selected front pads of the integrated circuit die to selected front pads of the substrate, first connection balls on selected front connection pads of the integrated circuit die, and second connection balls on selected front connection pads of the substrate. An integrated circuit device including a second substrate connected to the connection balls of the integrated circuit package.Type: ApplicationFiled: September 11, 2009Publication date: March 17, 2011Applicant: ST-ERICSSON SAInventors: Nedyalko Slavov, Heinz-Peter Wirtz, Thomas Villiger, Kwei-Kuan Kuo