Patents by Inventor Heinz Splittgerber

Heinz Splittgerber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy
    Patent number: 4261770
    Abstract: A process for producing epitaxial semiconductor material layers on monocrystalline substrates via liquid phase shift epitaxy wherein, in order to avoid bead-growth on a substrate, at least the lower region of an epitaxy solution chamber is clad with a substrate material so as to displace the location of the bead growth away from the actual substrate and toward the region of the cladding. This process is useful for producing GaAs-(Ga, Al) As and (Ga, In) (As, P) mixed crystal layers for luminescent diodes and laser diodes.
    Type: Grant
    Filed: March 13, 1980
    Date of Patent: April 14, 1981
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinz Splittgerber, Karl-Heinz Zschauer, Wolfgang Endler