Abstract: A cluster tool for processing a substrate includes a cassette and a processing module including a first processing chamber that is configured to perform a chill process on a substrate, a second processing chamber that is configured to perform a bake process on the substrate, and an input chamber. The first processing chamber, the second processing chamber, and the input chamber are substantially adjacent to each other. The processing module also includes a robot that is configured to receive the substrate in the input chamber and transfer and position the substrate in the first processing chamber and second processing chamber. The robot includes a robot blade, an actuator, and a heat exchanging device. The heat exchanging device includes a chilled transfer arm assembly. The cluster tool also includes a 6-axis articulated robot configured to transfer the substrate between the cassette and the input chamber.

Abstract: The present invention generally provides an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that is easily configurable, has an increased system throughput, increased system reliability, improved device yield performance, a more repeatable wafer processing history (or wafer history), and a reduced footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, and then certain portions of the photosensitive material are removed in a developing process completed in the cluster tool.

Abstract: One embodiment of the present invention is an electron beam treatment apparatus that includes: (a) a chamber; (b) a cathode having a surface of relatively large area that is exposed to an inside of the chamber; (c) an anode having holes therein that is disposed inside the chamber and spaced apart from the cathode by a working distance; (d) a wafer holder disposed inside the chamber facing the anode; (e) a source of negative voltage whole output is applied to the cathode to provide a cathode voltage; (f) a source of voltage whose output is applied to the anode; (g) a gas inlet adapted to admit gas into the chamber at an introduction rate; and (h) a pump adapted to exhaust gas from the chamber at an exhaust rate, the introduction rate and the exhaust rate providing a gas pressure in the chamber; wherein values of cathode voltage, gas pressure, and the working distance are such that there is no arcing between the cathode and anode and the working distance is greater than an electron mean free path.

Abstract: A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

Abstract: An electron beam apparatus that includes a vacuum chamber, a large-area cathode disposed in the vacuum chamber, and a first power supply connected to the cathode. The first power supply is configured to apply a negative voltage to the cathode sufficient to cause the cathode to emit electrons toward a substrate disposed in the vacuum chamber. The electron beam apparatus further includes an anode positioned between the large-area cathode and the substrate. The anode is made from aluminum. The electron beam apparatus further includes a second power supply connected to the anode, wherein the second power supply is configured to apply a voltage to the anode that is positive relative to the voltage applied to the cathode.

Abstract: An electron beam apparatus that includes a vacuum chamber, a large-area cathode disposed in the vacuum chamber, and a first power supply connected to the cathode. The first power supply is configured to apply a negative voltage to the cathode sufficient to cause the cathode to emit electrons toward a substrate disposed in the vacuum chamber. The electron beam apparatus further includes an anode positioned between the large-area cathode and the substrate. The anode is made from aluminum. The electron beam apparatus further includes a second power supply connected to the anode, wherein the second power supply is configured to apply a voltage to the anode that is positive relative to the voltage applied to the cathode.