Abstract: A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks are according to the general formula: wherein R1, R2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons.

Abstract: A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: wherein R is an aliphatic comprising group and R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

Abstract: A composition for planarizing a semiconductor device surface includes poly(methyl silsesquioxane) resin, at least one of a quaternary ammonium salt and an aminopropyltriethoxysilane salt, and at least one solvent. The poly(methyl silsesquioxane) resin ranges from 1 wt. % to 40 wt. % of the composition. The poly(methyl silsesquioxane) resin has a weight average molecular weight between 500 Da and 5,000 Da. The at least one of the quaternary ammonium salt and the aminopropyltriethoxysilane salt ranges from 0.01 wt. % to 0.20 wt. % of the composition. The at least one solvent comprises the balance of the composition.

Abstract: A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: wherein R is an aliphatic comprising group and R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.

Abstract: A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks are according to the general formula: wherein R1, R2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons.

Abstract: A composition for forming a coating is provided including at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group; an endcapping agent; and a solvent. A coated substrate, wherein the substrate is a silicon wafer or coated silicon wafer, includes an organic planarization layer in contact with the substrate, a photoresist layer, and a middle layer positioned between the organic planarization layer and the photoresist layer. The middle layer is formed from a composition including at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group, an endcapping agent; and a solvent.

Abstract: A composition for planarizing a semiconductor device surface includes poly(methyl silsesquioxane) resin, at least one of a quaternary ammonium salt and an aminopropyltriethoxysilane salt, and at least one solvent. The poly(methyl silsesquioxane) resin ranges from 1 wt. % to 40 wt. % of the composition. The poly(methyl silsesquioxane) resin has a weight average molecular weight between 500 Da and 5,000 Da. The at least one of the quaternary ammonium salt and the aminopropyltriethoxysilane salt ranges from 0.01 wt. % to 0.20 wt. % of the composition. The at least one solvent comprises the balance of the composition.

Abstract: A composition for forming a coating is provided including at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group; an endcapping agent; and a solvent. A coated substrate, wherein the substrate is a silicon wafer or coated silicon wafer, includes an organic planarization layer in contact with the substrate, a photoresist layer, and a middle layer positioned between the organic planarization layer and the photoresist layer. The middle layer is formed from a composition including at least one oxysilane-containing polymer or oligomer having an oxysilane group and at least one other organic crosslinkable group, an endcapping agent; and a solvent.