Abstract: A gas sensor comprises an enclosure configured to receive a gas. The enclosure comprises a sidewall extending, around a transverse axis, between a first wall and a second wall. The sensor also comprises a light source configured to emit a light wave that propagates in the enclosure and forms, from the light source, a first light cone. A measuring photodetector is configured to detect the light wave emitted by the light source and propagated through the enclosure. The first wall and the second wall each comprise at least one reflective surface, forming a portion of an ellipsoid of revolution. Each reflective surface is associated with a rank n, n being an integer greater than or equal to 1.

Abstract: An infrared light source includes an emitting element extending as a radial plane about the emitting element's center and configured to heat up to emit infrared light. The emitting element lies in a cavity bounded by a cover, placed facing the emitting element. The cover has internal and external faces, the internal face facing the emitting element, and the external face defining an interface between the cover and a medium outside the light source. The cover occupies, parallel to a transverse axis perpendicular to the radial plane, a thickness, between the internal and external faces. The external face includes a planar central portion and at least one peripheral portion adjacent and inclined respective to the central portion. The planar central portion extends about the external face's center. In the peripheral portion, the cover's thickness decreases as a function of a distance from the central portion.

Abstract: A gas sensor comprises an enclosure configured to receive a gas. The enclosure comprises a sidewall extending, around a transverse axis, between a first wall and a second wall. The sensor also comprises a light source configured to emit a light wave that propagates in the enclosure and forms, from the light source, a first light cone. A measuring photodetector is configured to detect the light wave emitted by the light source and propagated through the enclosure. The first wall and the second wall each comprise at least one reflective surface, forming a portion of an ellipsoid of revolution. Each reflective surface is associated with a rank n, n being an integer greater than or equal to 1.

Abstract: A method for measuring an amount of a gaseous species present in a gas, the gaseous species absorbing light in an absorption spectral band, comprises placing the gas between a light source and a measuring photodetector. The light source is configured to emit a light wave that propagates through the gas to the measuring photodetector. The light source is activated so as to illuminate the gas, so that the light source emits a light pulse. The method also includes measuring, with the measuring photodetector, a measurement intensity of a light wave transmitted by the gas during the illumination, in a measurement spectral band. The measurement spectral band comprises the absorption spectral band. The light source is activated using a pulsed activation signal, each pulse having a specific form, notably to reduce aging of the source.

Abstract: A gas sensor comprises a chamber configured to receive a gas; a light source configured to emit a light wave propagating through the chamber in an emission cone; a measurement photodetector and a reference photodetector, each configured to detect a light wave emitted by the light source and having passed through the chamber. The chamber extends between two transverse walls, arranged opposite one another and connected to one another by a peripheral wall extending therebetween, about a longitudinal axis (Z), and comprising a first reflective segment configured to receive a first portion of the emission cone to reflect it toward the measurement photodetector, thus forming a measurement cone converging toward the measurement photodetector. A second reflective segment of the peripheral wall is configured to receive a second portion of the emission cone to reflect it toward the reference photodetector, thus forming a reference cone converging toward the reference photodetector.

Abstract: A gas sensor comprises a chamber configured to receive a gas; a light source configured to emit a light wave propagating through the chamber in an emission cone; a measurement photodetector and a reference photodetector, each configured to detect a light wave emitted by the light source and having passed through the chamber. The chamber extends between two transverse walls, arranged opposite one another and connected to one another by a peripheral wall extending therebetween, about a longitudinal axis (Z), and comprising a first reflective segment configured to receive a first portion of the emission cone to reflect it toward the measurement photodetector, thus forming a measurement cone converging toward the measurement photodetector. A second reflective segment of the peripheral wall is configured to receive a second portion of the emission cone to reflect it toward the reference photodetector, thus forming a reference cone converging toward the reference photodetector.

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

Abstract: A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).