Abstract: Gallium nitride (GaN) transistors with lateral depletion for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen above a silicon substrate, a gate structure over the layer including gallium and nitrogen, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, and a source field plate laterally between the gate structure and the drain region, the source field plate laterally separated from the gate structure.

Abstract: Embodiments include a transistor and methods of forming a transistor. In an embodiment, the transistor comprises a semiconductor channel, a source electrode on a first side of the semiconductor channel, a drain electrode on a second side of the semiconductor channel, a polarization layer over the semiconductor channel, an insulator stack over the polarization layer, and a gate electrode over the semiconductor channel. In an embodiment, the gate electrode comprises a main body that passes through the insulator stack and the polarization layer, and a first field plate extending out laterally from the main body.

Abstract: Embodiments include a transistor and methods of forming a transistor. In an embodiment, the transistor comprises a semiconductor channel, a source electrode on a first side of the semiconductor channel, a drain electrode on a second side of the semiconductor channel, a polarization layer over the semiconductor channel, an insulator stack over the polarization layer, and a gate electrode over the semiconductor channel. In an embodiment, the gate electrode comprises a main body that passes through the insulator stack and the polarization layer, and a first field plate extending out laterally from the main body.