Patents by Inventor Helios Hyun Jae Kim

Helios Hyun Jae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF RECESSING A GATE STRUCTURE USING OXIDIZING TREATMENTS DURING A RECESSING ETCH PROCESS
    Publication number: 20170345912
    Abstract: A method includes forming a gate structure embedded in a dielectric layer above a substrate. A first recessing etch process is performed to remove a first portion of the gate structure. An oxidizing treatment is performed to oxidize a second portion of the gate structure after removing the first portion. A second recessing etch process is performed to remove at least the second portion to define a cap recess in the dielectric layer above the gate structure. A cap layer is formed in the cap recess.
    Type: Application
    Filed: May 26, 2016
    Publication date: November 30, 2017
    Inventor: Helios Hyun Jae Kim