Abstract: A photoresist suitable for the production of structures in the submicron range contains the following components:a polymer component with carboxylic acid anhydride functions and carboxylic acid tert. butyl ester groupsa photoinitiator which releases an acid when exposed anda suitable solvent.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative of the following structure: ##STR1## with D=O, S, or NH and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 and R.sup.2 is CN or NO.sub.2.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure: ##STR1## where D=O, S, or NH, and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 through R.sup.5 is F or CF.sub.3.

Abstract: In a method of synthesis of polybenzoxazole and polybenzothiazole precursors, a dicarboxylic acid or a dicarboxylaic acid ester is reacted with a bis-o-aminophenol or bis-o-aminothiophenol in a suitable solvent in the presence of an activating reagent having the following structure: ##STR1##

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure:M--CO--R*--CO--Mwhere M stands for the residue of an (optionally substituted) 2-hydroxybenzoxazole, 2-hydroxybenzothiazole, or 1-hydroxybenzotriazole or of corresponding mercapto compounds and R* is the parent body of the dicarboxylic acid.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid ester with the following structure:G--O--CO--R*--CO--O--G,where G is an (optionally substituted) succinimide or maleinimide group and R* is the parent body of the dicarboxylic acid.

Abstract: A method for producing poly-o-hydroxy amides by conversion of an activated dicarboxylic acid derivative with a bis-o-aminophenol. A solution of the activated dicarboxylic acid derivative is added to a solution of the bis-o-aminophenol in a lactone, and a tertiary amine is added to the resulting mixture, wherein the lactone has the following structure: ##STR1## where A is--(CR.sup.1 R.sup.2).sub.m --or--(CR.sup.3 R.sup.4).sub.n --NR.sup.5 --,R.sup.1 to R.sup.5 are independent of one anotherR.sup.1 and R.sup.2 are hydrogen, alkyl with 1 to 7 carbon atoms (linear or branched), --CO(CH.sub.2).sub.p CH.sub.3, or --COO(CH.sub.2).sub.p CH.sub.3, with p=0 or 1,R.sup.3 and R.sup.4 are hydrogen or alkyl with 1 to 3 carbon atoms (linear or branched),R.sup.5 is hydrogen or methyl,m is a whole number from 2 to 11, andn is a whole number from 1 to 3.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted at a temperature of .ltoreq.0.degree. C. with a mixed dianhydride of a dicarboxylic acid and a sulfonic acid with the following structure:E--SO.sub.2 --O--CO--R*--CO--O--SO.sub.2 --Ewhere E is an (optionally substituted) methyl, phenyl, or naphthyl group and R* is the parent body of the dicarboxylic acid.

Abstract: A method for producing poly-o-hydroxy amides by heating a dicarboxylic acid to a temperature .gtoreq.80.degree. C., together with a sulfonic acid chloride and a tertiary amine in a suitable solvent, to form a reaction mixture and reacting the mixture obtained with a bis-o-aminophenol solution at a temperature <80.degree. C.

Abstract: The dicarboxylic acid derivatives according to the invention have the following structure ##STR1## wherein X denotes O, S, (CF.sub.2).sub.m, C(CF.sub.3).sub.2 or CF.sub.2 --CF(CF.sub.3) (m=1 to 10), and R stems from the following compounds: fluoro- or trifluoromethyl- and nitro- or cyanophenols, thiophenols or -aminobenzenes, 4-hydroxy-, 4-mercapto- or 4-aminocoumarins, N-hydroxysuccinimides or N-hydroxymaleimides, 2-hydroxy- or 2-mercaptobenzoxazoles or -benzothiazoles and 1-hydroxy- or 1-mercaptobenzotriazoles.

Abstract: A dry-developable, positively acting TSI resist contains the following components:a suitable solvent,a strong acid former as the photoactive component, anda base polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic unit and glycidyl methacrylate and/or a styrene derivative as a further basic unit, and possibly an additive.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative of the following structure: ##STR1## with D=O, S, or NH and where R* is the parent body of the dicarboxylic acid and the groups R.sup.1 through R.sup.4 are H, F, CH.sub.3, or CF.sub.3 (with a maximum of two CH.sub.3 or CF.sub.3 groups).

Abstract: Premixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-hydroxyamide or a bis-o-mercaptoamide is reacted with a dihydroxy compound in the presence of a basic catalyst.

Abstract: Methods for producing solutions of polybenzoxazol precursors that are soluble in alkali and resist solutions based on such precursors. A dicarboxylic acid halogenide is reacted with a bis-(o-aminophenol) in an organic solvent and in the presence of a polymer with a tertiary N atom, which is insoluble in the solvent. Excess polymer and hydrohalogenide are separated from the reaction solution. The reaction solution is optionally mixed with a photoactive component.

Abstract: New mixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.

Abstract: A method for manufacturing multichip modules having layer sequences made of dielectric material with conducting tracks embedded therein is characterized by the following features: (1) a temperature-resistant, base-resistant polymer having a dielectric constant .ltoreq.3 is used as a dielectric material, which is applied to a non-conductive substrate and serves as an edge boundary for currentless, autocatalytic build-up of the conducting tracks; (2) the dielectric material is provided with a layer made of material which is soluble in organic solvents (lift-off layer); (3) the dielectric material and the lift-off layer are structured in a single lithographic step, either a direct or an indirect structuring taking place and grooves having an aspect ratio .gtoreq.

Abstract: A method for the photolithographic production of structures in the submicron range including the following steps:- a photoresist layer comprising a polymer containing carboxylic acid anhydride and carboxylic acid tert. butyl ester groups, a photoinitiator which releases an acid when exposed, and a suitable solvent is applied to a substrate;- the photoresist layer is dried;- the photoresist layer is exposed in an imagewise manner;- the exposed photoresist layer is subjected to temperature treatment;- the photoresist layer treated in this way is subjected to liquid silylation;- the silylated photoresist layer is dry-developed in an anisotropic oxygen plasma;where the temperature treatment is handled in such a way that the photoresist becomes hydrophilic in the exposed areas.

Abstract: Cost-effective, highly heat-resistant positive resists based on oligomer and/or polymer polybenzoxazole precursors and diazo quinones possess a high [level of] stability in storage when the polybenzoxazole precursors are hydroxypolyamides of the following structure: ##STR1## whereby R, R*, R.sub.1, R*.sub.1, and R.sub.2 are aromatic groups, R.sub.3 is an aliphatic, cycloaliphatic or aromatic group having at least one alkenyl or alkynyl grouping and, with respect to n.sub.1, n.sub.2 and n.sub.3, the following applies:n.sub.1 =1 to 100, n.sub.3 and n.sub.3 =0 orn.sub.1 and n.sub.2 =1 to 100, n.sub.3 =0 orn.sub.2 =1 to 100, n.sub.1 and n.sub.3 =0 orn.sub.1, n.sub.2 and n.sub.3 =1 to 100 (whereby R.noteq.R* and/or R.noteq.R*.sub.1) orn.sub.1 and n.sub.3 =1 to 100, n.sub.2 =0 (whereby R.noteq.R* and/or R.sub.1 .noteq.R*.sub.1) ,provided that: n.sub.1 +n.sub.2 +n.sub.3 >3.

Abstract: Phenylquinoxaline copolymers of the general formula: ##STR1## are described where R* signifies a polar unit. The application of these copolymers for producing highly heat-resistant dielectrics is also described.