Abstract: A thick layer formed of aSi or aSi/aSiN is used as an antireflection layer (3) in the lithographic structuring of layers (2) on a semiconductor substrate (1). A reflection suppression is based on absorption in the aSi layer and on interference in the aSiN layer. An optical decoupling of the background is achieved, with the result that the antireflection layer can be used universally.

Abstract: A multi-layer gate electrode is provided to prevent dopant depletion of a polysilicon in the manufacture of the electrode containing doped polysilicon and metal silicide. First, a multi-layer structure is produced containing a doped polysilicon structure, a diffusion barrier structure and a silicon structure. After deposition of a metal layer covering the multi-layer structure, a metal silicide structure is produced from the silicon structure and the metal layer in a tempering process. The diffusion barrier structure thereby prevents diffusion of dopant out of the polysilicon structure into the metal silicide structure. This may be used in a salicide process.

Abstract: A process for reducing the reflectivity of films which are produced by sputtering and are to be structured in semiconductor technology, especially a photographic technique, includes varying a process parameter at the end of the sputtering process resulting in a partial film mear the surface havaing reduced reflectivity while other properties of the film remain substantially the same.