Patents by Inventor Helmer Fjellvag

Helmer Fjellvag has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220259730
    Abstract: The invention relates to methods for the formation of rare earth nickelate thin films and “doped” (i.e. cation-substituted) variants thereof on a substrate using atomic layer deposition (ALD). The films can be deposited at low temperature (e.g. at temperatures as low as 225° C.) and have a range of useful properties including good crystallinity and high electrical conductivity, as well as interesting magnetic, optic and catalytic properties. These properties make the materials suitable for use in microelectronic applications, in the production of electrodes and as catalytic surfaces.
    Type: Application
    Filed: July 17, 2020
    Publication date: August 18, 2022
    Inventors: Henrik Hovde SØNSTEBY, Erik SKAAR, Jon BRATVOLD, Ola NILSEN, Helmer FJELLVÅG
  • Patent number: 8894723
    Abstract: A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: November 25, 2014
    Assignee: Universitetet I Oslo
    Inventors: Ola Nilsen, Helmer Fjellvåg, Mari Endresen Alnes, Titta Aaltonen, Matti Putkonen
  • Patent number: 8426061
    Abstract: Described is an anode material which is a transition metal nitride or carbide in form of nanoparticles, preferably a nitride or carbide with one nitrogen or carbon per metal, and especially a nitride or carbide having rock salt structure. A preferred anode material is vanadium nitride, in particular carbon coated vanadium nitride having a mean particle size of <500 nm. Embedded in an electrically conducting environment, such nanoparticulate material, in particular the vanadium nitride shows exceptional good charging-discharging cycle stability.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: April 23, 2013
    Assignee: Belenos Clean Power Holding AG
    Inventors: Reinhard Nesper, Dipan Kundu, Rahul Fotedar, Michael Woerle, Helmer Fjellvag
  • Patent number: 8124179
    Abstract: A process for the preparation of thin films of an organic-inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (PhI) have been used as precursors to fabricate thin films of aluminium benzene oxides constructing a hybrid type film. Further thin films with a hybrid nature are described. These films can be used as an optical material, a pressure sensor, a gas sensor, temperature sensor, magnetic field sensor, electric field sensor, a piezoelectric material, a magnetic material, a semiconductor material and as an electric insulating material.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: February 28, 2012
    Assignee: Universitetet I Oslo
    Inventors: Ola Nilsen, Helmer Fjellvag
  • Publication number: 20110099798
    Abstract: The present invention discloses a method for the formation of lithium comprising layer on a substrate using an atomic layer deposition method. The method comprises the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidising pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
    Type: Application
    Filed: December 23, 2008
    Publication date: May 5, 2011
    Applicant: UNIVERSITETET I OSLO
    Inventors: Ola Nilsen, Helmer Fjellvag, Mari Endresen Alnes, Titta Aaltonen, Matti Putkonen
  • Publication number: 20100233546
    Abstract: Described is an anode material which is a transition metal nitride or carbide in form of nanoparticles, preferably a nitride or carbide with one nitrogen or carbon per metal, and especially a nitride or carbide having rock salt structure. A preferred anode material is vanadium nitride, in particular carbon coated vanadium nitride having a mean particle size of <500 nm. Embedded in an electrically conducting environment, such nanoparticulate material, in particular the vanadium nitride shows exceptional good charging-discharging cycle stability.
    Type: Application
    Filed: March 11, 2010
    Publication date: September 16, 2010
    Applicant: BELENOS CLEAN POWER HOLDING AG
    Inventors: Reinhard Nesper, Dipan Kundu, Rahul Fotedar, Michael Woerle, Helmer Fjellvag
  • Publication number: 20090286674
    Abstract: A process for the preparation of active surfaces terminated by a desired form of organic, organic-inorganic, or inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (Phl) have been used as precursors to fabricate surfaces that are terminated by hydroxyl groups attached to aromates. Further types of active surfaces are described. These surfaces can be used to produce surfaces: suitable for adhesion through the use of glue or other adhesive, providing receptors for biological molecules, making the surfaces biocompatible, of catalytically active materials, where upon subsequent types of chemical reactions can take place, with different degrees of wetting properties.
    Type: Application
    Filed: June 19, 2007
    Publication date: November 19, 2009
    Applicant: UNIVERSITETET I OSLO
    Inventors: Helmer Fjellvag, Ola Nilsen
  • Publication number: 20090206297
    Abstract: An oxygen excess type metal oxide expressed with the following formula (1) and exhibiting high speed reversible oxygen diffusibility whereby a large amount of excess oxygen is diffused at a high speed and reversibly in a low temperature region: AjBkCmDnO7+???(1) where A: one or more trivalent rare earth ions and Ca B: one or more alkaline earth metals C, D: one or more oxygen tetra-coordinated cations among which at least one is a transition metal, where j>0, k>0, and, independently, m?0, n?0, and j+k+m+n=6, and 0<??1.5.
    Type: Application
    Filed: June 29, 2006
    Publication date: August 20, 2009
    Inventors: Maarit Karppinen, Hisao Yamauchi, Helmer Fjellvag, Teruki Motohashi
  • Publication number: 20080102313
    Abstract: A process for the preparation of thin films of an organic-inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (PhI) have been used as precursors to fabricate thin films of aluminium benzene oxides constructing a hybrid type film. Further thin films with a hybrid nature are described. These films can be used as an optical material, a pressure sensor, a gas sensor, temperature sensor, magnetic field sensor, electric field sensor, a piezoelectric material, a magnetic material, a semiconductor material and as an electric insulating material.
    Type: Application
    Filed: December 28, 2005
    Publication date: May 1, 2008
    Applicant: UNIVERSITETET I OSLO
    Inventors: Ola Nilsen, Helmer Fjellvag
  • Patent number: RE46610
    Abstract: A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: November 14, 2017
    Assignee: Universitetet I Oslo
    Inventors: Ola Nilsen, Helmer Fjellvåg, Mari Endresen Alnes, Titta Aaltonen, Matti Putkonen
  • Patent number: RE47325
    Abstract: A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
    Type: Grant
    Filed: November 8, 2017
    Date of Patent: March 26, 2019
    Assignee: Universitetet I Oslo
    Inventors: Ola Nilsen, Helmer Fjellvåg, Mari Endresen Alnes, Titta Aaltonen, Matti Putkonen
  • Patent number: RE48853
    Abstract: A method for the formation of lithium includes a layer on a substrate using an atomic layer deposition method. The method includes the sequential pulsing of a lithium precursor through a reaction chamber for deposition upon a substrate. Using further oxidizing pulses and or other metal containing precursor pulses, an electrolyte suitable for use in thin film batteries may be manufactured.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: December 14, 2021
    Assignee: Universitetet I Oslo
    Inventors: Ola Nilsen, Helmer Fjellvåg, Mari Endresen Alnes, Titta Aaltonen, Matti Putkonen