Abstract: A method and apparatus are provided for improving the dangling-bond saturation in amorphous silicon-germanium semiconductor layers. The deposition from the vapor phase of germane, silane, and hydrogen proceeds on the basis of different plasma excitations in the same reactor, that are spatially separated. Capacitive and inductively coupled plasmas are generated at different locations, in such a manner that the two plasmas superimpose in a central substrate region. For increasing the ionization density, the inductively excited plasma has a dc magnetic field for resonance excitation superimposed on it perpendicular to the radio frequency magnetic field. Amorphous silicon-germanium layers containing hydrogen are produced that have a low density of states and are particularly suitable for thin-film tandem solar cells.

Abstract: A method for manufacturing finger type electrode structures which form electric contacts at solar cells consisting of amorphous silicon. The substrate is first coated with a chromium-nickel layer and then a substantially pure nickel layer. After immersion in a mildly activated fluxing agent, a tin alloy layer is applied by dipping. The method enables the manufacture of very low resistance contact fingers at a p-i-n type solar cell provided with an ITO (In/Sn/oxide) layer.

Abstract: Solar cells having a semiconductor body composed of amorphous silicon which is deposited on a substrate coated with aluminum at least on one of its surfaces, with a diffusion barrier layer composed of titanium nitride positioned between the aluminum layer and the semiconductor body. The aluminum layer and the titanium nitride layer can be produced by high frequency sputtering while the semiconductor body can be produced by a glow discharge deposition.

Abstract: Solar cells having a semiconductor body composed of amorphous silicon which is applied to a substrate coated at least at one surface thereof with aluminum, functioning as a back contact. Recrystallization is prevented by alloying silicon or silicon/titanium into the aluminum layer so that the amounts of silicon within the alloy is, in preferred embodiments, about 1.3% by weight and, with the presence of 0.1% by weight titanium, is at about 1.2% by weight.

Abstract: Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which includes maintaining the doping material in a plasma in the container, and leading doping material ions into the semiconductor material by means of the electrical field, and an apparatus for carrying out the method.

Abstract: An RC network is disclosed in which two electrically conducting regions and a dielectric lying between these regions form a capacitor. At least one of the electrically conducting regions consists of resistance material and is designed in the shape of a meandering path. This network can be balanced while still guaranteeing a uniform region distribution of the resistance and the capacitance, by means of a laser beam. Upon a carrier of heat-resistant material, a resistance layer, a dielectric of glow discharge polymer, and an opposite electrode capable of regeneration, are applied. The dielectric completely covers the resistance layer with the exception of contact pads.

Abstract: Solar cells are constructed as a plurality of spaced strips formed along the length of synthetic foils. They are connected in series along their entire length in a simple manner. Therefore, the connections are formed by means of vapor-deposited metal layers and the solar cells lying next to one another are connected in series by means of vapor-deposited metal layers, whereby these vapor-deposited metal layers respectively connect the upper semiconductor layer or, respectively, a Schottky contact metal layer, as the case may be, of one solar cell with the lower metal layer of the neighboring solar cell. Sections of any desired length may be cut off from the elongated battery by cutting transversely to the length thereof. The series-connected sections thus formed may be employed without re-wiring.

Abstract: A thin film circuit consisting of a planar substrate of insulating material and a thin metal film formed from an alloy of aluminum with between 2 to 20 atom percent tantalum from which resistors and capacitors are developed. The metal film has an equivalent composition to a film which is formed by means of reactive cathode sputtering. In particular, the film is equivalent to a film formed using a cathode of aluminum and tantalum which is reactively sputtered in a sputtering atmosphere containing oxygten with a low partial pressure.In such an arrangement, the temperature coefficient of resistance and the capacity temperature coefficient compensate one another. The alloy films have a high oxidation stability and the resistors and capacitors therefrom have a high resistance to aging.