Abstract: A chamber (10) for applying material to the surface of a semiconductor wafer (18) located in the chamber by means of cathodic sputtering a target (26), located on a target mount (24), of the material to be applied or a component thereof, contains a wafer mount (14) on which the semiconductor wafer (18) to be coated is located. The wafer mount (14) is provided movable in the chamber (10) between a charging position for application of the semiconductor wafer and a sputtering position in which semiconductor wafer is located at a predefined distance away from and opposite to the target. Provided in the chamber is a shielding support (30) which is supported by the edge of the semiconductor wafer in the sputtering position in maintaining it in contact with the wafer mount, the shielding support extending between the edge of the semiconductor wafer and a portion adjoining the edge of the target on the target mount and thus defining a sputtering space between the target and the semiconductor wafer.

Abstract: A chamber (10) for applying material to the surface of a semiconductor wafer (18) located in the chamber by means of cathodic sputtering a target (26), located on a target mount (24), of the material to be applied or a component thereof, contains a wafer mount (14) on which the semiconductor wafer (18) to be coated is located. The wafer mount (14) is provided movable in the chamber (10) between a charging position for application of the semiconductor wafer and a sputtering position in which semiconductor wafer is located at a predefined distance away from and opposite to the target. Provided in the chamber is a shielding support (30) which is supported by the edge of the semiconductor wafer in the sputtering position in maintaining it in contact with the wafer mount, the shielding support extending between the edge of the semiconductor wafer and a portion adjoining the edge of the target on the target mount and thus defining a sputtering space between the target and the semiconductor wafer.

Abstract: An apparatus for wet etching of thin films with which etching rate differences as between various regions of a respective thin film down to only 5% can be achieved. The apparatus includes a housing (10) providing a liquid treatment chamber in which at least one rotational-symmetrical basket (12; 14) is arranged for accommodating semiconductor slices (16) having the thin films to be etched. The basket (12, 14) rests on two rollers (18, 20; 22), one of which is driven. Longitudinally above the basket (12; 14), flat jet nozzles (24) are arranged in such a manner that the jets of etching solution sprayed out of the nozzles form a homogeneous flat jet (26). The flat jet (26) is directed laterally in the direction of the axis of symmetry of the basket (12; 14). With this apparatus, overflow conditions on the surfaces of the slices (16) to be processed are obtained which are so uniform that the apparatus is suitable for use in the wet etching of aluminium layers in device fabrication.

Abstract: In the etching by means of an etching solution of an electrically conductive layer applied to a substrate the time profile or variation of the diffusion current flowing between the layer to be etched away and the etching solution is measured. The substrate is removed from the etching solution as soon as the diffusion current passes through a steep drop for the second time and assumes a constant value.